Development of a magnetic tunnel transistor based on a double tunnel junction

G. Rodary; M. Hehn; T. Dimopoulos; D. Lacour; J. Bangert; H. Jaffrès; F. Montaigne; F. Nguyen Van Dau; F. Petroff; A. Schuhl; J. Wecker

doi:10.1016/j.jmmm.2004.11.464

Development of a magnetic tunnel transistor based on a double tunnel junction

G. Rodary
, M. Hehn
, T. Dimopoulos
, D. Lacour
, J. Bangert
, H. Jaffrès
, F. Montaigne
, F. Nguyen Van Dau
, F. Petroff
, A. Schuhl
, J. Wecker

U. Mixte de Physique CNRS/Thales
Univ.́ Henri Poincaré
Siemens AG

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

We report on the latest development of a new type of magnetic tunnel transistor (MTT) using a ferromagnetic base layer and two magnetic tunnel junctions (MTJ). The principle of the device is based on the transport of a spin-polarized hot electron current which can be manipulated under an appropriate voltage biasing scheme using three terminals. The first MTJ is used as an emitter of hot electrons into the base. The second MTJ and the base play the role of a spin-dependent filter. Transport measurements have been carried out, showing the creation of hot electrons and a collected magnetocurrent (MC) signal.

Original language	English
Pages (from-to)	1097-1099
Number of pages	3
Journal	Journal of Magnetism and Magnetic Materials
Volume	290-291 PART 2
DOIs	https://doi.org/10.1016/j.jmmm.2004.11.464
Publication status	Published - 1 Apr 2005
Externally published	Yes

Keywords

Magnetoresistance-multilayers
Transport properties
Tunneling

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10.1016/j.jmmm.2004.11.464

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title = "Development of a magnetic tunnel transistor based on a double tunnel junction",

abstract = "We report on the latest development of a new type of magnetic tunnel transistor (MTT) using a ferromagnetic base layer and two magnetic tunnel junctions (MTJ). The principle of the device is based on the transport of a spin-polarized hot electron current which can be manipulated under an appropriate voltage biasing scheme using three terminals. The first MTJ is used as an emitter of hot electrons into the base. The second MTJ and the base play the role of a spin-dependent filter. Transport measurements have been carried out, showing the creation of hot electrons and a collected magnetocurrent (MC) signal.",

keywords = "Magnetoresistance-multilayers, Transport properties, Tunneling",

author = "G. Rodary and M. Hehn and T. Dimopoulos and D. Lacour and J. Bangert and H. Jaffr{\`e}s and F. Montaigne and \{Van Dau\}, \{F. Nguyen\} and F. Petroff and A. Schuhl and J. Wecker",

year = "2005",

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doi = "10.1016/j.jmmm.2004.11.464",

language = "English",

volume = "290-291 PART 2",

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journal = "Journal of Magnetism and Magnetic Materials",

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TY - JOUR

T1 - Development of a magnetic tunnel transistor based on a double tunnel junction

AU - Rodary, G.

AU - Hehn, M.

AU - Dimopoulos, T.

AU - Lacour, D.

AU - Bangert, J.

AU - Jaffrès, H.

AU - Montaigne, F.

AU - Van Dau, F. Nguyen

AU - Petroff, F.

AU - Schuhl, A.

AU - Wecker, J.

PY - 2005/4/1

Y1 - 2005/4/1

N2 - We report on the latest development of a new type of magnetic tunnel transistor (MTT) using a ferromagnetic base layer and two magnetic tunnel junctions (MTJ). The principle of the device is based on the transport of a spin-polarized hot electron current which can be manipulated under an appropriate voltage biasing scheme using three terminals. The first MTJ is used as an emitter of hot electrons into the base. The second MTJ and the base play the role of a spin-dependent filter. Transport measurements have been carried out, showing the creation of hot electrons and a collected magnetocurrent (MC) signal.

AB - We report on the latest development of a new type of magnetic tunnel transistor (MTT) using a ferromagnetic base layer and two magnetic tunnel junctions (MTJ). The principle of the device is based on the transport of a spin-polarized hot electron current which can be manipulated under an appropriate voltage biasing scheme using three terminals. The first MTJ is used as an emitter of hot electrons into the base. The second MTJ and the base play the role of a spin-dependent filter. Transport measurements have been carried out, showing the creation of hot electrons and a collected magnetocurrent (MC) signal.

KW - Magnetoresistance-multilayers

KW - Transport properties

KW - Tunneling

U2 - 10.1016/j.jmmm.2004.11.464

DO - 10.1016/j.jmmm.2004.11.464

M3 - Article

AN - SCOPUS:20144372908

SN - 0304-8853

VL - 290-291 PART 2

SP - 1097

EP - 1099

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

ER -

Development of a magnetic tunnel transistor based on a double tunnel junction

Abstract

Keywords

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