Device quality a-Si:H deposited from electron cyclotron resonance at very high deposition rates

M. E. Gueunier-Farret; C. Bazin; J. P. Kleider; C. Longeaud; P. Bulkin; D. Daineka; T. H. Dao; P. Roca i Cabarrocas; P. Descamps; T. Kervyn de Meerendre; P. Leempoel; M. Meaudre; R. Meaudre

doi:10.1016/j.jnoncrysol.2006.01.080

Device quality a-Si:H deposited from electron cyclotron resonance at very high deposition rates

M. E. Gueunier-Farret
, C. Bazin
, J. P. Kleider
, C. Longeaud
, P. Bulkin
, D. Daineka
, T. H. Dao
, P. Roca i Cabarrocas
, P. Descamps
, T. Kervyn de Meerendre
, P. Leempoel
, M. Meaudre
, R. Meaudre

Université Paris-Sud 11
Institut polytechnique de Paris
Dow Corning ATVB Energy - Europe
IGFL, Université de Lyon, Université Lyon 1

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

Hydrogenated amorphous silicon (a-Si:H) samples were produced by Electron Cyclotron Resonance (ECR) plasma at very high deposition rates (up to 38 Å/s). The transport and defect-related properties were inferred on 0.1-4.3 μm thick samples in coplanar and sandwich geometries using a set of complementary techniques. The best samples deposited around 25 Å/s exhibit electronic properties comparable to those of solar device quality a-Si:H deposited by RF PECVD at deposition rates around 1 Å/s.

Original language	English
Pages (from-to)	1913-1916
Number of pages	4
Journal	Journal of Non-Crystalline Solids
Volume	352
Issue number	9-20 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.jnoncrysol.2006.01.080
Publication status	Published - 15 Jun 2006

Keywords

Amorphous silicon
Defects
High deposition rates
Transport properties

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10.1016/j.jnoncrysol.2006.01.080

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Gueunier-Farret, M. E., Bazin, C., Kleider, J. P., Longeaud, C., Bulkin, P., Daineka, D., Dao, T. H., Roca i Cabarrocas, P., Descamps, P., Kervyn de Meerendre, T., Leempoel, P., Meaudre, M., & Meaudre, R. (2006). Device quality a-Si:H deposited from electron cyclotron resonance at very high deposition rates. Journal of Non-Crystalline Solids, 352(9-20 SPEC. ISS.), 1913-1916. https://doi.org/10.1016/j.jnoncrysol.2006.01.080

@article{e4d743943c2d4d86bffc2f3e4f92d593,

title = "Device quality a-Si:H deposited from electron cyclotron resonance at very high deposition rates",

abstract = "Hydrogenated amorphous silicon (a-Si:H) samples were produced by Electron Cyclotron Resonance (ECR) plasma at very high deposition rates (up to 38 {\AA}/s). The transport and defect-related properties were inferred on 0.1-4.3 μm thick samples in coplanar and sandwich geometries using a set of complementary techniques. The best samples deposited around 25 {\AA}/s exhibit electronic properties comparable to those of solar device quality a-Si:H deposited by RF PECVD at deposition rates around 1 {\AA}/s.",

keywords = "Amorphous silicon, Defects, High deposition rates, Transport properties",

author = "Gueunier-Farret, \{M. E.\} and C. Bazin and Kleider, \{J. P.\} and C. Longeaud and P. Bulkin and D. Daineka and Dao, \{T. H.\} and \{Roca i Cabarrocas\}, P. and P. Descamps and \{Kervyn de Meerendre\}, T. and P. Leempoel and M. Meaudre and R. Meaudre",

year = "2006",

month = jun,

day = "15",

doi = "10.1016/j.jnoncrysol.2006.01.080",

language = "English",

volume = "352",

pages = "1913--1916",

journal = "Journal of Non-Crystalline Solids",

issn = "0022-3093",

publisher = "Elsevier B.V.",

number = "9-20 SPEC. ISS.",

}

Gueunier-Farret, ME, Bazin, C, Kleider, JP, Longeaud, C, Bulkin, P, Daineka, D, Dao, TH, Roca i Cabarrocas, P, Descamps, P, Kervyn de Meerendre, T, Leempoel, P, Meaudre, M & Meaudre, R 2006, 'Device quality a-Si:H deposited from electron cyclotron resonance at very high deposition rates', Journal of Non-Crystalline Solids, vol. 352, no. 9-20 SPEC. ISS., pp. 1913-1916. https://doi.org/10.1016/j.jnoncrysol.2006.01.080

TY - JOUR

T1 - Device quality a-Si:H deposited from electron cyclotron resonance at very high deposition rates

AU - Gueunier-Farret, M. E.

AU - Bazin, C.

AU - Kleider, J. P.

AU - Longeaud, C.

AU - Bulkin, P.

AU - Daineka, D.

AU - Dao, T. H.

AU - Roca i Cabarrocas, P.

AU - Descamps, P.

AU - Kervyn de Meerendre, T.

AU - Leempoel, P.

AU - Meaudre, M.

AU - Meaudre, R.

PY - 2006/6/15

Y1 - 2006/6/15

N2 - Hydrogenated amorphous silicon (a-Si:H) samples were produced by Electron Cyclotron Resonance (ECR) plasma at very high deposition rates (up to 38 Å/s). The transport and defect-related properties were inferred on 0.1-4.3 μm thick samples in coplanar and sandwich geometries using a set of complementary techniques. The best samples deposited around 25 Å/s exhibit electronic properties comparable to those of solar device quality a-Si:H deposited by RF PECVD at deposition rates around 1 Å/s.

AB - Hydrogenated amorphous silicon (a-Si:H) samples were produced by Electron Cyclotron Resonance (ECR) plasma at very high deposition rates (up to 38 Å/s). The transport and defect-related properties were inferred on 0.1-4.3 μm thick samples in coplanar and sandwich geometries using a set of complementary techniques. The best samples deposited around 25 Å/s exhibit electronic properties comparable to those of solar device quality a-Si:H deposited by RF PECVD at deposition rates around 1 Å/s.

KW - Amorphous silicon

KW - Defects

KW - High deposition rates

KW - Transport properties

U2 - 10.1016/j.jnoncrysol.2006.01.080

DO - 10.1016/j.jnoncrysol.2006.01.080

M3 - Article

AN - SCOPUS:33745444516

SN - 0022-3093

VL - 352

SP - 1913

EP - 1916

JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

IS - 9-20 SPEC. ISS.

ER -

Device quality a-Si:H deposited from electron cyclotron resonance at very high deposition rates

Abstract

Keywords

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