Dielectric breakdown in SiO2 via electric field induced attached hydrogen defects

Jamil Tahir-Kheli; M. Miyata; W. A. Goddard

doi:10.1016/j.mee.2005.04.031

Dielectric breakdown in SiO₂ via electric field induced attached hydrogen defects

Jamil Tahir-Kheli, M. Miyata, W. A. Goddard

Research output: Contribution to journal › Conference article › peer-review

Abstract

We propose a new mechanism for dielectric breakdown in thin gate oxides. Using First Principles calculations, we have found a new meta-stable structure where an interstitial Hydrogen Radical attaches to a network Oxygen without breaking the Si-O bond (Att_Rad state). Calculations in an external electric field find that the energy of the Att_Rad state is reduced. A pair of such Att_Rad states is further stabilized when they form a dimer (Att-Dimer state). This electric field induced Att_Dimer state is thermally accessible for very thin oxides and can form a percolating path that may explain the phenomenon of soft breakdown.

Original language	English
Pages (from-to)	174-177
Number of pages	4
Journal	Microelectronic Engineering
Volume	80
Issue number	SUPPL.
DOIs	https://doi.org/10.1016/j.mee.2005.04.031
Publication status	Published - 17 Jun 2005
Externally published	Yes
Event	14th Biennial Conference on Insulating Films on Semiconductors - Duration: 22 Jun 2005 → 24 Jun 2005

Keywords

Dielectric breakdown
Electric field
First Principles calculation
Hydrogen defects
Thin gate oxide

Access to Document

10.1016/j.mee.2005.04.031

Cite this

@article{aa72bc0821b340f58487b90d2d65a0f6,

title = "Dielectric breakdown in SiO2 via electric field induced attached hydrogen defects",

abstract = "We propose a new mechanism for dielectric breakdown in thin gate oxides. Using First Principles calculations, we have found a new meta-stable structure where an interstitial Hydrogen Radical attaches to a network Oxygen without breaking the Si-O bond (Att\_Rad state). Calculations in an external electric field find that the energy of the Att\_Rad state is reduced. A pair of such Att\_Rad states is further stabilized when they form a dimer (Att-Dimer state). This electric field induced Att\_Dimer state is thermally accessible for very thin oxides and can form a percolating path that may explain the phenomenon of soft breakdown.",

keywords = "Dielectric breakdown, Electric field, First Principles calculation, Hydrogen defects, Thin gate oxide",

author = "Jamil Tahir-Kheli and M. Miyata and Goddard, \{W. A.\}",

year = "2005",

month = jun,

day = "17",

doi = "10.1016/j.mee.2005.04.031",

language = "English",

volume = "80",

pages = "174--177",

journal = "Microelectronic Engineering",

issn = "0167-9317",

number = "SUPPL.",

note = "14th Biennial Conference on Insulating Films on Semiconductors ; Conference date: 22-06-2005 Through 24-06-2005",

}

TY - JOUR

T1 - Dielectric breakdown in SiO2 via electric field induced attached hydrogen defects

AU - Tahir-Kheli, Jamil

AU - Miyata, M.

AU - Goddard, W. A.

PY - 2005/6/17

Y1 - 2005/6/17

N2 - We propose a new mechanism for dielectric breakdown in thin gate oxides. Using First Principles calculations, we have found a new meta-stable structure where an interstitial Hydrogen Radical attaches to a network Oxygen without breaking the Si-O bond (Att_Rad state). Calculations in an external electric field find that the energy of the Att_Rad state is reduced. A pair of such Att_Rad states is further stabilized when they form a dimer (Att-Dimer state). This electric field induced Att_Dimer state is thermally accessible for very thin oxides and can form a percolating path that may explain the phenomenon of soft breakdown.

AB - We propose a new mechanism for dielectric breakdown in thin gate oxides. Using First Principles calculations, we have found a new meta-stable structure where an interstitial Hydrogen Radical attaches to a network Oxygen without breaking the Si-O bond (Att_Rad state). Calculations in an external electric field find that the energy of the Att_Rad state is reduced. A pair of such Att_Rad states is further stabilized when they form a dimer (Att-Dimer state). This electric field induced Att_Dimer state is thermally accessible for very thin oxides and can form a percolating path that may explain the phenomenon of soft breakdown.

KW - Dielectric breakdown

KW - Electric field

KW - First Principles calculation

KW - Hydrogen defects

KW - Thin gate oxide

U2 - 10.1016/j.mee.2005.04.031

DO - 10.1016/j.mee.2005.04.031

M3 - Conference article

AN - SCOPUS:19944373423

SN - 0167-9317

VL - 80

SP - 174

EP - 177

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - SUPPL.

T2 - 14th Biennial Conference on Insulating Films on Semiconductors

Y2 - 22 June 2005 through 24 June 2005