Differences in the SiO2/InP interfaces obtained by thermal and UV-induced chemical vapour deposition

C. Licoppe; C. Debauche; F. Houzay; J. Flicstein; Y. I. Nissim; J. M. Moison

doi:10.1016/0169-4332(92)90339-Y

Differences in the SiO₂/InP interfaces obtained by thermal and UV-induced chemical vapour deposition

C. Licoppe, C. Debauche, F. Houzay, J. Flicstein, Y. I. Nissim, J. M. Moison

Orange Labs

Research output: Contribution to journal › Article › peer-review

Abstract

The interface between InP covered by its native oxide and SiO₂ is built up the thermal or UV-assisted chemical vapour deposition from silane precursor gas. It is analyzed in situ by X-ray photoemission spectroscopy in an ultra-high-vacuum environment and by infrared absorption spectroscopy in a low-pressure deposition reactor. Both techniques indicate that the two processes lead to a grossly similar interface InPSiOSi⋯ involving the reduction of native oxides. However, significant differences are observed concerning the state of oxidation of silicon, the presence of hydrogen, and the morphology of the interfacial layer. Results are discussed in an interface engineering perspective.

Original language	English
Pages (from-to)	789-794
Number of pages	6
Journal	Applied Surface Science
Volume	56-58
Issue number	PART 2
DOIs	https://doi.org/10.1016/0169-4332(92)90339-Y
Publication status	Published - 1 Jan 1992
Externally published	Yes

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title = "Differences in the SiO2/InP interfaces obtained by thermal and UV-induced chemical vapour deposition",

abstract = "The interface between InP covered by its native oxide and SiO2 is built up the thermal or UV-assisted chemical vapour deposition from silane precursor gas. It is analyzed in situ by X-ray photoemission spectroscopy in an ultra-high-vacuum environment and by infrared absorption spectroscopy in a low-pressure deposition reactor. Both techniques indicate that the two processes lead to a grossly similar interface InPSiOSi⋯ involving the reduction of native oxides. However, significant differences are observed concerning the state of oxidation of silicon, the presence of hydrogen, and the morphology of the interfacial layer. Results are discussed in an interface engineering perspective.",

author = "C. Licoppe and C. Debauche and F. Houzay and J. Flicstein and Nissim, \{Y. I.\} and Moison, \{J. M.\}",

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doi = "10.1016/0169-4332(92)90339-Y",

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AU - Licoppe, C.

AU - Debauche, C.

AU - Houzay, F.

AU - Flicstein, J.

AU - Nissim, Y. I.

AU - Moison, J. M.

PY - 1992/1/1

Y1 - 1992/1/1

N2 - The interface between InP covered by its native oxide and SiO2 is built up the thermal or UV-assisted chemical vapour deposition from silane precursor gas. It is analyzed in situ by X-ray photoemission spectroscopy in an ultra-high-vacuum environment and by infrared absorption spectroscopy in a low-pressure deposition reactor. Both techniques indicate that the two processes lead to a grossly similar interface InPSiOSi⋯ involving the reduction of native oxides. However, significant differences are observed concerning the state of oxidation of silicon, the presence of hydrogen, and the morphology of the interfacial layer. Results are discussed in an interface engineering perspective.

AB - The interface between InP covered by its native oxide and SiO2 is built up the thermal or UV-assisted chemical vapour deposition from silane precursor gas. It is analyzed in situ by X-ray photoemission spectroscopy in an ultra-high-vacuum environment and by infrared absorption spectroscopy in a low-pressure deposition reactor. Both techniques indicate that the two processes lead to a grossly similar interface InPSiOSi⋯ involving the reduction of native oxides. However, significant differences are observed concerning the state of oxidation of silicon, the presence of hydrogen, and the morphology of the interfacial layer. Results are discussed in an interface engineering perspective.

U2 - 10.1016/0169-4332(92)90339-Y

DO - 10.1016/0169-4332(92)90339-Y

M3 - Article

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VL - 56-58

SP - 789

EP - 794

JO - Applied Surface Science

JF - Applied Surface Science

IS - PART 2

ER -

Differences in the SiO2/InP interfaces obtained by thermal and UV-induced chemical vapour deposition

Abstract

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Differences in the SiO₂/InP interfaces obtained by thermal and UV-induced chemical vapour deposition