Direct band gap germanium

A. Elbaz; M. El Kurdi; M. Prost; A. Ghrib; S. Sauvage; X. Checoury; F. Aniel; N. Zerounian; G. Picardi; R. Ossikovski; G. Beaudoin; I. Sagnes; F. Boeuf; P. Boucaud

doi:10.1149/07508.0177ecst

Direct band gap germanium

A. Elbaz
, M. El Kurdi
, M. Prost
, A. Ghrib
, S. Sauvage
, X. Checoury
, F. Aniel
, N. Zerounian
, G. Picardi
, R. Ossikovski
, G. Beaudoin
, I. Sagnes
, F. Boeuf
, P. Boucaud

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We show that direct band gap germanium can be obtained with external silicon nitride stressor layers. The cross-over from indirect to direct band gap is found to occur for an equivalent 1.67% biaxial tensile strain. Both whispering gallery modes and quasiradial modes are observed with tensile-strained Ge microdisks. Quality factors up to 7100 have been measured around 2 μm wavelength. We demonstrate that circular Bragg reflectors can significantly enhance the quality factors of quasi-radial modes in strained germanium microdisks.

Original language	English
Title of host publication	SiGe, Ge, and Related Materials
Subtitle of host publication	Materials, Processing, and Devices 7
Editors	J. Murota, B. Tillack, M. Caymax, G. Masini, D. L. Harame, S. Miyazaki
Publisher	Electrochemical Society Inc.
Pages	177-184
Number of pages	8
Edition	8
ISBN (Electronic)	9781607685395
DOIs	https://doi.org/10.1149/07508.0177ecst
Publication status	Published - 1 Jan 2016
Externally published	Yes
Event	Symposium on SiGe, Ge, and Related Materials: Materials, Processing, and Devices 7 - PRiME 2016/230th ECS Meeting - Honolulu, United States Duration: 2 Oct 2016 → 7 Oct 2016

Publication series

Name	ECS Transactions
Number	8
Volume	75
ISSN (Print)	1938-6737
ISSN (Electronic)	1938-5862

Conference

Conference	Symposium on SiGe, Ge, and Related Materials: Materials, Processing, and Devices 7 - PRiME 2016/230th ECS Meeting
Country/Territory	United States
City	Honolulu
Period	2/10/16 → 7/10/16

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10.1149/07508.0177ecst

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Elbaz, A., El Kurdi, M., Prost, M., Ghrib, A., Sauvage, S., Checoury, X., Aniel, F., Zerounian, N., Picardi, G., Ossikovski, R., Beaudoin, G., Sagnes, I., Boeuf, F., & Boucaud, P. (2016). Direct band gap germanium. In J. Murota, B. Tillack, M. Caymax, G. Masini, D. L. Harame, & S. Miyazaki (Eds.), SiGe, Ge, and Related Materials: Materials, Processing, and Devices 7 (8 ed., pp. 177-184). (ECS Transactions; Vol. 75, No. 8). Electrochemical Society Inc.. https://doi.org/10.1149/07508.0177ecst

@inproceedings{a6a185cf5c5e4032ba9aa092f9ad222d,

title = "Direct band gap germanium",

abstract = "We show that direct band gap germanium can be obtained with external silicon nitride stressor layers. The cross-over from indirect to direct band gap is found to occur for an equivalent 1.67\% biaxial tensile strain. Both whispering gallery modes and quasiradial modes are observed with tensile-strained Ge microdisks. Quality factors up to 7100 have been measured around 2 μm wavelength. We demonstrate that circular Bragg reflectors can significantly enhance the quality factors of quasi-radial modes in strained germanium microdisks.",

author = "A. Elbaz and \{El Kurdi\}, M. and M. Prost and A. Ghrib and S. Sauvage and X. Checoury and F. Aniel and N. Zerounian and G. Picardi and R. Ossikovski and G. Beaudoin and I. Sagnes and F. Boeuf and P. Boucaud",

note = "Publisher Copyright: {\textcopyright} The Electrochemical Society.; Symposium on SiGe, Ge, and Related Materials: Materials, Processing, and Devices 7 - PRiME 2016/230th ECS Meeting ; Conference date: 02-10-2016 Through 07-10-2016",

year = "2016",

month = jan,

day = "1",

doi = "10.1149/07508.0177ecst",

language = "English",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

number = "8",

pages = "177--184",

editor = "J. Murota and B. Tillack and M. Caymax and G. Masini and Harame, \{D. L.\} and S. Miyazaki",

booktitle = "SiGe, Ge, and Related Materials",

edition = "8",

}

Elbaz, A, El Kurdi, M, Prost, M, Ghrib, A, Sauvage, S, Checoury, X, Aniel, F, Zerounian, N, Picardi, G, Ossikovski, R, Beaudoin, G, Sagnes, I, Boeuf, F & Boucaud, P 2016, Direct band gap germanium. in J Murota, B Tillack, M Caymax, G Masini, DL Harame & S Miyazaki (eds), SiGe, Ge, and Related Materials: Materials, Processing, and Devices 7. 8 edn, ECS Transactions, no. 8, vol. 75, Electrochemical Society Inc., pp. 177-184, Symposium on SiGe, Ge, and Related Materials: Materials, Processing, and Devices 7 - PRiME 2016/230th ECS Meeting, Honolulu, United States, 2/10/16. https://doi.org/10.1149/07508.0177ecst

Direct band gap germanium. / Elbaz, A.; El Kurdi, M.; Prost, M. et al.
SiGe, Ge, and Related Materials: Materials, Processing, and Devices 7. ed. / J. Murota; B. Tillack; M. Caymax; G. Masini; D. L. Harame; S. Miyazaki. 8. ed. Electrochemical Society Inc., 2016. p. 177-184 (ECS Transactions; Vol. 75, No. 8).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Direct band gap germanium

AU - Elbaz, A.

AU - El Kurdi, M.

AU - Prost, M.

AU - Ghrib, A.

AU - Sauvage, S.

AU - Checoury, X.

AU - Aniel, F.

AU - Zerounian, N.

AU - Picardi, G.

AU - Ossikovski, R.

AU - Beaudoin, G.

AU - Sagnes, I.

AU - Boeuf, F.

AU - Boucaud, P.

PY - 2016/1/1

Y1 - 2016/1/1

N2 - We show that direct band gap germanium can be obtained with external silicon nitride stressor layers. The cross-over from indirect to direct band gap is found to occur for an equivalent 1.67% biaxial tensile strain. Both whispering gallery modes and quasiradial modes are observed with tensile-strained Ge microdisks. Quality factors up to 7100 have been measured around 2 μm wavelength. We demonstrate that circular Bragg reflectors can significantly enhance the quality factors of quasi-radial modes in strained germanium microdisks.

AB - We show that direct band gap germanium can be obtained with external silicon nitride stressor layers. The cross-over from indirect to direct band gap is found to occur for an equivalent 1.67% biaxial tensile strain. Both whispering gallery modes and quasiradial modes are observed with tensile-strained Ge microdisks. Quality factors up to 7100 have been measured around 2 μm wavelength. We demonstrate that circular Bragg reflectors can significantly enhance the quality factors of quasi-radial modes in strained germanium microdisks.

U2 - 10.1149/07508.0177ecst

DO - 10.1149/07508.0177ecst

M3 - Conference contribution

AN - SCOPUS:84991577524

T3 - ECS Transactions

SP - 177

EP - 184

BT - SiGe, Ge, and Related Materials

A2 - Murota, J.

A2 - Tillack, B.

A2 - Caymax, M.

A2 - Masini, G.

A2 - Harame, D. L.

A2 - Miyazaki, S.

PB - Electrochemical Society Inc.

T2 - Symposium on SiGe, Ge, and Related Materials: Materials, Processing, and Devices 7 - PRiME 2016/230th ECS Meeting

Y2 - 2 October 2016 through 7 October 2016

ER -

Direct band gap germanium

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