Direct growth of crystalline silicon on GaAs by low temperature PECVD: Towards hybrid tunnel junctions for III-V/Si tandem cells

G. Hamon; J. Decobert; N. Vaissiere; R. Lachaume; R. Cariou; W. Chen; J. Alvarez; N. Habka; J. P. Kleider; P. Roca I Cabarrocas

doi:10.1109/PVSC.2017.8366414

Direct growth of crystalline silicon on GaAs by low temperature PECVD: Towards hybrid tunnel junctions for III-V/Si tandem cells

G. Hamon
, J. Decobert
, N. Vaissiere
, R. Lachaume
, R. Cariou
, W. Chen
, J. Alvarez
, N. Habka
, J. P. Kleider
, P. Roca I Cabarrocas

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Monolithical integration of III-V and Si is of strong interest to produce tandem solar cells reaching high conversion efficiencies. In the context of the French ANR research project IMPETUS, an innovative approach for III-V/Si multijunction solar cells is studied. The targeted device is a tandem cell composed of a III-V top cell (AlGaAs) and a IV bottom cell (Si_1-xGe_x). The choice of Al_yGa_1-yAs as the top material is justified because it provides the optimum bandgap combination with Si_1-xGe_x (1.63 eV/0.96 eV), with theoretical efficiencies in excess of 42% for such a tandem configuration. In our inverted metamorphic approach, we first use MOVPE to grow the AlGaAs top cell on a lattice matched GaAs substrate, and then perform low temperature PECVD heteroepitaxial SiGe on top. We show here the first structural and electrical characterizations of Si(PECVD)/III-V(MOVPE) interfaces. Furthermore, the epitaxial growth of highly doped crystalline Si by low-temperature PECVD on GaAs enables us to fabricate hybrid tunnel junctions with low resistivity and a high current, suitable to interconnect the two subcells in the tandem III-V/Si solar cell.

Original language	English
Title of host publication	2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1555-1560
Number of pages	6
ISBN (Electronic)	9781509056057
DOIs	https://doi.org/10.1109/PVSC.2017.8366414
Publication status	Published - 1 Jan 2017
Externally published	Yes
Event	44th IEEE Photovoltaic Specialist Conference, PVSC 2017 - Washington, United States Duration: 25 Jun 2017 → 30 Jun 2017

Publication series

Name	2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017

Conference

Conference	44th IEEE Photovoltaic Specialist Conference, PVSC 2017
Country/Territory	United States
City	Washington
Period	25/06/17 → 30/06/17

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

Epitaxy
GaAs
III-V
PECVD
Photovoltaic cells
Silicon
Tandem
Tunnel Junction

Access to Document

10.1109/PVSC.2017.8366414

Cite this

Hamon, G., Decobert, J., Vaissiere, N., Lachaume, R., Cariou, R., Chen, W., Alvarez, J., Habka, N., Kleider, J. P., & I Cabarrocas, P. R. (2017). Direct growth of crystalline silicon on GaAs by low temperature PECVD: Towards hybrid tunnel junctions for III-V/Si tandem cells. In 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017 (pp. 1555-1560). (2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2017.8366414

Hamon, G. ; Decobert, J. ; Vaissiere, N. et al. / Direct growth of crystalline silicon on GaAs by low temperature PECVD : Towards hybrid tunnel junctions for III-V/Si tandem cells. 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 1555-1560 (2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017).

@inproceedings{5b7af40edac44e54a33cb7a9a755df19,

title = "Direct growth of crystalline silicon on GaAs by low temperature PECVD: Towards hybrid tunnel junctions for III-V/Si tandem cells",

abstract = "Monolithical integration of III-V and Si is of strong interest to produce tandem solar cells reaching high conversion efficiencies. In the context of the French ANR research project IMPETUS, an innovative approach for III-V/Si multijunction solar cells is studied. The targeted device is a tandem cell composed of a III-V top cell (AlGaAs) and a IV bottom cell (Si1-xGex). The choice of AlyGa1-yAs as the top material is justified because it provides the optimum bandgap combination with Si1-xGex (1.63 eV/0.96 eV), with theoretical efficiencies in excess of 42\% for such a tandem configuration. In our inverted metamorphic approach, we first use MOVPE to grow the AlGaAs top cell on a lattice matched GaAs substrate, and then perform low temperature PECVD heteroepitaxial SiGe on top. We show here the first structural and electrical characterizations of Si(PECVD)/III-V(MOVPE) interfaces. Furthermore, the epitaxial growth of highly doped crystalline Si by low-temperature PECVD on GaAs enables us to fabricate hybrid tunnel junctions with low resistivity and a high current, suitable to interconnect the two subcells in the tandem III-V/Si solar cell.",

keywords = "Epitaxy, GaAs, III-V, PECVD, Photovoltaic cells, Silicon, Tandem, Tunnel Junction",

author = "G. Hamon and J. Decobert and N. Vaissiere and R. Lachaume and R. Cariou and W. Chen and J. Alvarez and N. Habka and Kleider, \{J. P.\} and \{I Cabarrocas\}, \{P. Roca\}",

note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 44th IEEE Photovoltaic Specialist Conference, PVSC 2017 ; Conference date: 25-06-2017 Through 30-06-2017",

year = "2017",

month = jan,

day = "1",

doi = "10.1109/PVSC.2017.8366414",

language = "English",

series = "2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017",

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Hamon, G, Decobert, J, Vaissiere, N, Lachaume, R, Cariou, R, Chen, W, Alvarez, J, Habka, N, Kleider, JP & I Cabarrocas, PR 2017, Direct growth of crystalline silicon on GaAs by low temperature PECVD: Towards hybrid tunnel junctions for III-V/Si tandem cells. in 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017, Institute of Electrical and Electronics Engineers Inc., pp. 1555-1560, 44th IEEE Photovoltaic Specialist Conference, PVSC 2017, Washington, United States, 25/06/17. https://doi.org/10.1109/PVSC.2017.8366414

Direct growth of crystalline silicon on GaAs by low temperature PECVD: Towards hybrid tunnel junctions for III-V/Si tandem cells. / Hamon, G.; Decobert, J.; Vaissiere, N. et al.
2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc., 2017. p. 1555-1560 (2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Direct growth of crystalline silicon on GaAs by low temperature PECVD

T2 - 44th IEEE Photovoltaic Specialist Conference, PVSC 2017

AU - Hamon, G.

AU - Decobert, J.

AU - Vaissiere, N.

AU - Lachaume, R.

AU - Cariou, R.

AU - Chen, W.

AU - Alvarez, J.

AU - Habka, N.

AU - Kleider, J. P.

AU - I Cabarrocas, P. Roca

PY - 2017/1/1

Y1 - 2017/1/1

N2 - Monolithical integration of III-V and Si is of strong interest to produce tandem solar cells reaching high conversion efficiencies. In the context of the French ANR research project IMPETUS, an innovative approach for III-V/Si multijunction solar cells is studied. The targeted device is a tandem cell composed of a III-V top cell (AlGaAs) and a IV bottom cell (Si1-xGex). The choice of AlyGa1-yAs as the top material is justified because it provides the optimum bandgap combination with Si1-xGex (1.63 eV/0.96 eV), with theoretical efficiencies in excess of 42% for such a tandem configuration. In our inverted metamorphic approach, we first use MOVPE to grow the AlGaAs top cell on a lattice matched GaAs substrate, and then perform low temperature PECVD heteroepitaxial SiGe on top. We show here the first structural and electrical characterizations of Si(PECVD)/III-V(MOVPE) interfaces. Furthermore, the epitaxial growth of highly doped crystalline Si by low-temperature PECVD on GaAs enables us to fabricate hybrid tunnel junctions with low resistivity and a high current, suitable to interconnect the two subcells in the tandem III-V/Si solar cell.

AB - Monolithical integration of III-V and Si is of strong interest to produce tandem solar cells reaching high conversion efficiencies. In the context of the French ANR research project IMPETUS, an innovative approach for III-V/Si multijunction solar cells is studied. The targeted device is a tandem cell composed of a III-V top cell (AlGaAs) and a IV bottom cell (Si1-xGex). The choice of AlyGa1-yAs as the top material is justified because it provides the optimum bandgap combination with Si1-xGex (1.63 eV/0.96 eV), with theoretical efficiencies in excess of 42% for such a tandem configuration. In our inverted metamorphic approach, we first use MOVPE to grow the AlGaAs top cell on a lattice matched GaAs substrate, and then perform low temperature PECVD heteroepitaxial SiGe on top. We show here the first structural and electrical characterizations of Si(PECVD)/III-V(MOVPE) interfaces. Furthermore, the epitaxial growth of highly doped crystalline Si by low-temperature PECVD on GaAs enables us to fabricate hybrid tunnel junctions with low resistivity and a high current, suitable to interconnect the two subcells in the tandem III-V/Si solar cell.

KW - Epitaxy

KW - GaAs

KW - III-V

KW - PECVD

KW - Photovoltaic cells

KW - Silicon

KW - Tandem

KW - Tunnel Junction

UR - https://www.scopus.com/pages/publications/85048504941

U2 - 10.1109/PVSC.2017.8366414

DO - 10.1109/PVSC.2017.8366414

M3 - Conference contribution

AN - SCOPUS:85048504941

T3 - 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017

SP - 1555

EP - 1560

BT - 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017

PB - Institute of Electrical and Electronics Engineers Inc.

Y2 - 25 June 2017 through 30 June 2017

ER -

Hamon G, Decobert J, Vaissiere N, Lachaume R, Cariou R, Chen W et al. Direct growth of crystalline silicon on GaAs by low temperature PECVD: Towards hybrid tunnel junctions for III-V/Si tandem cells. In 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc. 2017. p. 1555-1560. (2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017). doi: 10.1109/PVSC.2017.8366414

Direct growth of crystalline silicon on GaAs by low temperature PECVD: Towards hybrid tunnel junctions for III-V/Si tandem cells

Abstract

Publication series

Conference

UN SDGs

Keywords

Access to Document

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