Direct imaging of boron segregation to extended defects in silicon

S. Duguay; T. Philippe; F. Cristiano; D. Blavette

doi:10.1063/1.3526376

Direct imaging of boron segregation to extended defects in silicon

S. Duguay
, T. Philippe
, F. Cristiano
, D. Blavette

INSA Rouen Normandie
Université Paul Sabatier
Institut Universitaire de France

Research output: Contribution to journal › Article › peer-review

Abstract

Silicon was implanted with a high boron dose (5× 1015 at. cm-2) at 30 keV and further annealed at 950 °C for 30 s. The sample was analyzed using transmission electron microscopy (TEM) and atom probe tomography (APT). TEM images revealed the presence of a high density of dislocation loops (∼ 1011 / cm-2) distributed around the projected range of implanted atoms. APT reconstructions showed local enrichment of boron in the form of loops that were interpreted as Cottrell atmosphere. Boron enriched rods, interpreted as the {113} defects, were also observed. Segregation energies of boron atoms to these defects were estimated to be ∼0.35 eV.

Original language	English
Article number	242104
Journal	Applied Physics Letters
Volume	97
Issue number	24
DOIs	https://doi.org/10.1063/1.3526376
Publication status	Published - 13 Dec 2010
Externally published	Yes

Access to Document

10.1063/1.3526376

Cite this

@article{7aa1d957f20c497e87a81bd3636ccf74,

title = "Direct imaging of boron segregation to extended defects in silicon",

abstract = "Silicon was implanted with a high boron dose (5× 1015 at. cm-2) at 30 keV and further annealed at 950 °C for 30 s. The sample was analyzed using transmission electron microscopy (TEM) and atom probe tomography (APT). TEM images revealed the presence of a high density of dislocation loops (∼ 1011 / cm-2) distributed around the projected range of implanted atoms. APT reconstructions showed local enrichment of boron in the form of loops that were interpreted as Cottrell atmosphere. Boron enriched rods, interpreted as the \{113\} defects, were also observed. Segregation energies of boron atoms to these defects were estimated to be ∼0.35 eV.",

author = "S. Duguay and T. Philippe and F. Cristiano and D. Blavette",

year = "2010",

month = dec,

day = "13",

doi = "10.1063/1.3526376",

language = "English",

volume = "97",

journal = "Applied Physics Letters",

issn = "0003-6951",

number = "24",

}

TY - JOUR

T1 - Direct imaging of boron segregation to extended defects in silicon

AU - Duguay, S.

AU - Philippe, T.

AU - Cristiano, F.

AU - Blavette, D.

PY - 2010/12/13

Y1 - 2010/12/13

N2 - Silicon was implanted with a high boron dose (5× 1015 at. cm-2) at 30 keV and further annealed at 950 °C for 30 s. The sample was analyzed using transmission electron microscopy (TEM) and atom probe tomography (APT). TEM images revealed the presence of a high density of dislocation loops (∼ 1011 / cm-2) distributed around the projected range of implanted atoms. APT reconstructions showed local enrichment of boron in the form of loops that were interpreted as Cottrell atmosphere. Boron enriched rods, interpreted as the {113} defects, were also observed. Segregation energies of boron atoms to these defects were estimated to be ∼0.35 eV.

AB - Silicon was implanted with a high boron dose (5× 1015 at. cm-2) at 30 keV and further annealed at 950 °C for 30 s. The sample was analyzed using transmission electron microscopy (TEM) and atom probe tomography (APT). TEM images revealed the presence of a high density of dislocation loops (∼ 1011 / cm-2) distributed around the projected range of implanted atoms. APT reconstructions showed local enrichment of boron in the form of loops that were interpreted as Cottrell atmosphere. Boron enriched rods, interpreted as the {113} defects, were also observed. Segregation energies of boron atoms to these defects were estimated to be ∼0.35 eV.

UR - https://www.scopus.com/pages/publications/78650320563

U2 - 10.1063/1.3526376

DO - 10.1063/1.3526376

M3 - Article

AN - SCOPUS:78650320563

SN - 0003-6951

VL - 97

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 24

M1 - 242104

ER -

Direct imaging of boron segregation to extended defects in silicon

Abstract

Access to Document

Other files and links

Fingerprint

Cite this