Abstract
Complete solid-phase epitaxial regrowth of ion-implanted layers in GaAs has been obtained in the temperature range 150-400 °C. Implantation of tellurium at an energy and dose slightly greater than the amorphization threshold was used to produce an amorphous layer in the near-surface region of the GaAs samples. Complete crystallization was achieved over the entire temperature range using a resistively heated sample holder and cw laser irradiation. In situ time-resolved optical reflectivity measurements were used to observe and measure the epitaxial growth rate of the process. It has been found that the solid-phase epitaxy process follows an activation law whose activation energy is 1.6 eV.
| Original language | English |
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| Pages (from-to) | 3094-3096 |
| Number of pages | 3 |
| Journal | Journal of Applied Physics |
| Volume | 58 |
| Issue number | 8 |
| DOIs | |
| Publication status | Published - 1 Jan 1985 |
| Externally published | Yes |