Directional growth of Ge on GaAs at 175 °c using plasma-generated nanocrystals

Erik V. Johnson; Gilles Patriarche; Pere Roca i Cabarrocas

doi:10.1063/1.2895636

Directional growth of Ge on GaAs at 175 °c using plasma-generated nanocrystals

Erik V. Johnson, Gilles Patriarche, Pere Roca i Cabarrocas

Centre de Nanosciences et de Nanotechnologies

Research output: Contribution to journal › Article › peer-review

Abstract

We demonstrate the directional growth of Ge on a GaAs {100} wafer at 175 °C using radio-frequency plasma-enhanced chemical vapor deposition at 13.56 MHz under conditions where nanocrystals are the primary contributors to film growth. High resolution transmission electron microscopy (HRTEM) verifies the transport of plasma-formed nanocrystals to the substrate surface where they are initially mobile. Furthermore, cross-sectional HRTEM images show directional growth on the GaAs wafer, wherein the incident Ge nanocrystals have adopted the orientation of the underlying lattice.

Original language	English
Article number	103108
Journal	Applied Physics Letters
Volume	92
Issue number	10
DOIs	https://doi.org/10.1063/1.2895636
Publication status	Published - 1 Jan 2008

Access to Document

10.1063/1.2895636

Cite this

@article{93c1b7a7d4df481b8462a425eb832794,

title = "Directional growth of Ge on GaAs at 175 °c using plasma-generated nanocrystals",

abstract = "We demonstrate the directional growth of Ge on a GaAs \{100\} wafer at 175 °C using radio-frequency plasma-enhanced chemical vapor deposition at 13.56 MHz under conditions where nanocrystals are the primary contributors to film growth. High resolution transmission electron microscopy (HRTEM) verifies the transport of plasma-formed nanocrystals to the substrate surface where they are initially mobile. Furthermore, cross-sectional HRTEM images show directional growth on the GaAs wafer, wherein the incident Ge nanocrystals have adopted the orientation of the underlying lattice.",

author = "Johnson, \{Erik V.\} and Gilles Patriarche and \{Roca i Cabarrocas\}, Pere",

year = "2008",

month = jan,

day = "1",

doi = "10.1063/1.2895636",

language = "English",

volume = "92",

journal = "Applied Physics Letters",

issn = "0003-6951",

number = "10",

}

TY - JOUR

T1 - Directional growth of Ge on GaAs at 175 °c using plasma-generated nanocrystals

AU - Johnson, Erik V.

AU - Patriarche, Gilles

AU - Roca i Cabarrocas, Pere

PY - 2008/1/1

Y1 - 2008/1/1

N2 - We demonstrate the directional growth of Ge on a GaAs {100} wafer at 175 °C using radio-frequency plasma-enhanced chemical vapor deposition at 13.56 MHz under conditions where nanocrystals are the primary contributors to film growth. High resolution transmission electron microscopy (HRTEM) verifies the transport of plasma-formed nanocrystals to the substrate surface where they are initially mobile. Furthermore, cross-sectional HRTEM images show directional growth on the GaAs wafer, wherein the incident Ge nanocrystals have adopted the orientation of the underlying lattice.

AB - We demonstrate the directional growth of Ge on a GaAs {100} wafer at 175 °C using radio-frequency plasma-enhanced chemical vapor deposition at 13.56 MHz under conditions where nanocrystals are the primary contributors to film growth. High resolution transmission electron microscopy (HRTEM) verifies the transport of plasma-formed nanocrystals to the substrate surface where they are initially mobile. Furthermore, cross-sectional HRTEM images show directional growth on the GaAs wafer, wherein the incident Ge nanocrystals have adopted the orientation of the underlying lattice.

U2 - 10.1063/1.2895636

DO - 10.1063/1.2895636

M3 - Article

AN - SCOPUS:40849147385

SN - 0003-6951

VL - 92

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

M1 - 103108

ER -

Directional growth of Ge on GaAs at 175 °c using plasma-generated nanocrystals

Abstract

Access to Document

Fingerprint

Cite this