Dispersive processes of light-induced defect creation in hydrogenated amorphous silicon

K. Morigaki; K. Takeda; H. Hikita; P. Roca i Cabarrocas

doi:10.1016/j.ssc.2007.01.049

Dispersive processes of light-induced defect creation in hydrogenated amorphous silicon

K. Morigaki
, K. Takeda
, H. Hikita
, P. Roca i Cabarrocas

Research output: Contribution to journal › Article › peer-review

Abstract

The growing curve of light-induced dangling bonds under illumination has been observed for various intensities of illumination in a-Si:H. It is fitted to a stretched exponential function and then two parameters β and τ involved in the function are estimated as a function of saturated dangling bond density N_ss. The experimental values of β, τ, and N_ss are compared with those calculated based on our model of light-induced defect creation in a-Si:H.

Original language	English
Pages (from-to)	232-236
Number of pages	5
Journal	Solid State Communications
Volume	142
Issue number	4
DOIs	https://doi.org/10.1016/j.ssc.2007.01.049
Publication status	Published - 1 Apr 2007

Keywords

A. Amorphous Semiconductors
A. Disordered system
D. Light-induced phenomena
D. Recombination and trapping

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10.1016/j.ssc.2007.01.049

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title = "Dispersive processes of light-induced defect creation in hydrogenated amorphous silicon",

abstract = "The growing curve of light-induced dangling bonds under illumination has been observed for various intensities of illumination in a-Si:H. It is fitted to a stretched exponential function and then two parameters β and τ involved in the function are estimated as a function of saturated dangling bond density Nss. The experimental values of β, τ, and Nss are compared with those calculated based on our model of light-induced defect creation in a-Si:H.",

keywords = "A. Amorphous Semiconductors, A. Disordered system, D. Light-induced phenomena, D. Recombination and trapping",

author = "K. Morigaki and K. Takeda and H. Hikita and \{Roca i Cabarrocas\}, P.",

year = "2007",

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T1 - Dispersive processes of light-induced defect creation in hydrogenated amorphous silicon

AU - Morigaki, K.

AU - Takeda, K.

AU - Hikita, H.

AU - Roca i Cabarrocas, P.

PY - 2007/4/1

Y1 - 2007/4/1

N2 - The growing curve of light-induced dangling bonds under illumination has been observed for various intensities of illumination in a-Si:H. It is fitted to a stretched exponential function and then two parameters β and τ involved in the function are estimated as a function of saturated dangling bond density Nss. The experimental values of β, τ, and Nss are compared with those calculated based on our model of light-induced defect creation in a-Si:H.

AB - The growing curve of light-induced dangling bonds under illumination has been observed for various intensities of illumination in a-Si:H. It is fitted to a stretched exponential function and then two parameters β and τ involved in the function are estimated as a function of saturated dangling bond density Nss. The experimental values of β, τ, and Nss are compared with those calculated based on our model of light-induced defect creation in a-Si:H.

KW - A. Amorphous Semiconductors

KW - A. Disordered system

KW - D. Light-induced phenomena

KW - D. Recombination and trapping

UR - https://www.scopus.com/pages/publications/33947212862

U2 - 10.1016/j.ssc.2007.01.049

DO - 10.1016/j.ssc.2007.01.049

M3 - Article

AN - SCOPUS:33947212862

SN - 0038-1098

VL - 142

SP - 232

EP - 236

JO - Solid State Communications

JF - Solid State Communications

IS - 4

ER -

Dispersive processes of light-induced defect creation in hydrogenated amorphous silicon

Abstract

Keywords

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