Distributed and coupled electrothermal model of power semiconductor devices

G. Belkacem; D. Labrousse; S. Lefebvre; P. Y. Joubert; U. Kuhne; L. Fribourg; R. Soulat; E. Florentin; C. Rey

doi:10.1109/REVET.2012.6195253

Distributed and coupled electrothermal model of power semiconductor devices

G. Belkacem
, D. Labrousse
, S. Lefebvre
, P. Y. Joubert
, U. Kuhne
, L. Fribourg
, R. Soulat
, E. Florentin
, C. Rey

Paris-Saclay University
Université Paris
LSV - ENS Cachan
MSSMat, UMR 8579 CNRS-Ecole Centrale Paris, Grande Voie des Vignes

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Electro-thermal model of power semiconductor devices are of key importance in order to optimize their thermal design and increase their reliability. The development of such an electro-thermal model for power MOSFET transistors (COOLMOS™) based on the coupling between two computation softwares (Matlab and Cast3M) is described in the paper. The elaborated 2D electro-thermal model is able to predict i) the temperature distribution on chip surface well as in volume, ii) the effect of the temperature on the distribution of the current flowing within the die and iii) the effects of the ageing of the metallization layer on the current density and the temperature. In the paper, the used electrical and thermal models are described as well as the implemented coupling scheme.

Original language	English
Title of host publication	2012 1st International Conference on Renewable Energies and Vehicular Technology, REVET 2012
Pages	84-89
Number of pages	6
DOIs	https://doi.org/10.1109/REVET.2012.6195253
Publication status	Published - 24 May 2012
Externally published	Yes
Event	2012 1st International Conference on Renewable Energies and Vehicular Technology, REVET 2012 - Nabeul, Tunisia Duration: 26 Mar 2012 → 28 Mar 2012

Publication series

Name	2012 1st International Conference on Renewable Energies and Vehicular Technology, REVET 2012

Conference

Conference	2012 1st International Conference on Renewable Energies and Vehicular Technology, REVET 2012
Country/Territory	Tunisia
City	Nabeul
Period	26/03/12 → 28/03/12

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

Ageing of power semiconductor devices
Degradation of the metallization layer
Electro-thermal model
Power semiconductor transistors
Short circuit

Access to Document

10.1109/REVET.2012.6195253

Cite this

Belkacem, G., Labrousse, D., Lefebvre, S., Joubert, P. Y., Kuhne, U., Fribourg, L., Soulat, R., Florentin, E., & Rey, C. (2012). Distributed and coupled electrothermal model of power semiconductor devices. In 2012 1st International Conference on Renewable Energies and Vehicular Technology, REVET 2012 (pp. 84-89). Article 6195253 (2012 1st International Conference on Renewable Energies and Vehicular Technology, REVET 2012). https://doi.org/10.1109/REVET.2012.6195253

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title = "Distributed and coupled electrothermal model of power semiconductor devices",

abstract = "Electro-thermal model of power semiconductor devices are of key importance in order to optimize their thermal design and increase their reliability. The development of such an electro-thermal model for power MOSFET transistors (COOLMOS{\texttrademark}) based on the coupling between two computation softwares (Matlab and Cast3M) is described in the paper. The elaborated 2D electro-thermal model is able to predict i) the temperature distribution on chip surface well as in volume, ii) the effect of the temperature on the distribution of the current flowing within the die and iii) the effects of the ageing of the metallization layer on the current density and the temperature. In the paper, the used electrical and thermal models are described as well as the implemented coupling scheme.",

keywords = "Ageing of power semiconductor devices, Degradation of the metallization layer, Electro-thermal model, Power semiconductor transistors, Short circuit",

author = "G. Belkacem and D. Labrousse and S. Lefebvre and Joubert, \{P. Y.\} and U. Kuhne and L. Fribourg and R. Soulat and E. Florentin and C. Rey",

year = "2012",

month = may,

day = "24",

doi = "10.1109/REVET.2012.6195253",

language = "English",

isbn = "9781467311687",

series = "2012 1st International Conference on Renewable Energies and Vehicular Technology, REVET 2012",

pages = "84--89",

booktitle = "2012 1st International Conference on Renewable Energies and Vehicular Technology, REVET 2012",

note = "2012 1st International Conference on Renewable Energies and Vehicular Technology, REVET 2012 ; Conference date: 26-03-2012 Through 28-03-2012",

}

Belkacem, G, Labrousse, D, Lefebvre, S, Joubert, PY, Kuhne, U, Fribourg, L, Soulat, R, Florentin, E & Rey, C 2012, Distributed and coupled electrothermal model of power semiconductor devices. in 2012 1st International Conference on Renewable Energies and Vehicular Technology, REVET 2012., 6195253, 2012 1st International Conference on Renewable Energies and Vehicular Technology, REVET 2012, pp. 84-89, 2012 1st International Conference on Renewable Energies and Vehicular Technology, REVET 2012, Nabeul, Tunisia, 26/03/12. https://doi.org/10.1109/REVET.2012.6195253

Distributed and coupled electrothermal model of power semiconductor devices. / Belkacem, G.; Labrousse, D.; Lefebvre, S. et al.
2012 1st International Conference on Renewable Energies and Vehicular Technology, REVET 2012. 2012. p. 84-89 6195253 (2012 1st International Conference on Renewable Energies and Vehicular Technology, REVET 2012).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Distributed and coupled electrothermal model of power semiconductor devices

AU - Belkacem, G.

AU - Labrousse, D.

AU - Lefebvre, S.

AU - Joubert, P. Y.

AU - Kuhne, U.

AU - Fribourg, L.

AU - Soulat, R.

AU - Florentin, E.

AU - Rey, C.

PY - 2012/5/24

Y1 - 2012/5/24

N2 - Electro-thermal model of power semiconductor devices are of key importance in order to optimize their thermal design and increase their reliability. The development of such an electro-thermal model for power MOSFET transistors (COOLMOS™) based on the coupling between two computation softwares (Matlab and Cast3M) is described in the paper. The elaborated 2D electro-thermal model is able to predict i) the temperature distribution on chip surface well as in volume, ii) the effect of the temperature on the distribution of the current flowing within the die and iii) the effects of the ageing of the metallization layer on the current density and the temperature. In the paper, the used electrical and thermal models are described as well as the implemented coupling scheme.

AB - Electro-thermal model of power semiconductor devices are of key importance in order to optimize their thermal design and increase their reliability. The development of such an electro-thermal model for power MOSFET transistors (COOLMOS™) based on the coupling between two computation softwares (Matlab and Cast3M) is described in the paper. The elaborated 2D electro-thermal model is able to predict i) the temperature distribution on chip surface well as in volume, ii) the effect of the temperature on the distribution of the current flowing within the die and iii) the effects of the ageing of the metallization layer on the current density and the temperature. In the paper, the used electrical and thermal models are described as well as the implemented coupling scheme.

KW - Ageing of power semiconductor devices

KW - Degradation of the metallization layer

KW - Electro-thermal model

KW - Power semiconductor transistors

KW - Short circuit

U2 - 10.1109/REVET.2012.6195253

DO - 10.1109/REVET.2012.6195253

M3 - Conference contribution

AN - SCOPUS:84862094270

SN - 9781467311687

T3 - 2012 1st International Conference on Renewable Energies and Vehicular Technology, REVET 2012

SP - 84

EP - 89

BT - 2012 1st International Conference on Renewable Energies and Vehicular Technology, REVET 2012

T2 - 2012 1st International Conference on Renewable Energies and Vehicular Technology, REVET 2012

Y2 - 26 March 2012 through 28 March 2012

ER -

Belkacem G, Labrousse D, Lefebvre S, Joubert PY, Kuhne U, Fribourg L et al. Distributed and coupled electrothermal model of power semiconductor devices. In 2012 1st International Conference on Renewable Energies and Vehicular Technology, REVET 2012. 2012. p. 84-89. 6195253. (2012 1st International Conference on Renewable Energies and Vehicular Technology, REVET 2012). doi: 10.1109/REVET.2012.6195253

Distributed and coupled electrothermal model of power semiconductor devices

Abstract

Publication series

Conference

UN SDGs

Keywords

Access to Document

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