Doping and oxidation effects in raman spectra of manganites

V. B. Podobedov; A. Weber; G. Dezanneau; S. Pignard; J. Kreizel; H. Vincent

doi:10.1557/proc-574-143

Doping and oxidation effects in raman spectra of manganites

V. B. Podobedov, A. Weber, G. Dezanneau, S. Pignard, J. Kreizel, H. Vincent

Research output: Contribution to journal › Conference article › peer-review

Abstract

Roman scattering from La_yR_xMnO_3-δ compounds (single crystals, ceramics, films) was studied as a function of kind (R) and amount (x) of dopant as well as of oxygen deficit (δ). For x = 0.1 to 0.55, a nearly linear Raman shift of the A_g mode from 240 to 125 cm^-1 was observed in Sr-doped compounds. While the intensity of disorder-induced Raman bands was found to be sensitive to the oxygen content, the symmetry allowed related Raman modes exhibit the changes in the frequency. As an indication of deposition conditions, lowering of a symmetry of the film structures with respect to single crystals and ceramics was detected. We discuss the physical nature of the observed effects and show how Raman data can be used for the optical characterization of manganite samples.

Original language	English
Pages (from-to)	143-148
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	574
DOIs	https://doi.org/10.1557/proc-574-143
Publication status	Published - 1 Jan 1999
Externally published	Yes
Event	Proceedings of the 1999 MRS Spring Meeting - Symposium BB: 'Multicomponent Oxide Films for Electronics' - San Francisco, CA, United States Duration: 6 Apr 1999 → 8 Apr 1999

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@article{7a144e2e0b4340789865c0a60f04b0b8,

title = "Doping and oxidation effects in raman spectra of manganites",

abstract = "Roman scattering from LayRxMnO3-δ compounds (single crystals, ceramics, films) was studied as a function of kind (R) and amount (x) of dopant as well as of oxygen deficit (δ). For x = 0.1 to 0.55, a nearly linear Raman shift of the Ag mode from 240 to 125 cm-1 was observed in Sr-doped compounds. While the intensity of disorder-induced Raman bands was found to be sensitive to the oxygen content, the symmetry allowed related Raman modes exhibit the changes in the frequency. As an indication of deposition conditions, lowering of a symmetry of the film structures with respect to single crystals and ceramics was detected. We discuss the physical nature of the observed effects and show how Raman data can be used for the optical characterization of manganite samples.",

author = "Podobedov, \{V. B.\} and A. Weber and G. Dezanneau and S. Pignard and J. Kreizel and H. Vincent",

year = "1999",

month = jan,

day = "1",

doi = "10.1557/proc-574-143",

language = "English",

volume = "574",

pages = "143--148",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

note = "Proceedings of the 1999 MRS Spring Meeting - Symposium BB: 'Multicomponent Oxide Films for Electronics' ; Conference date: 06-04-1999 Through 08-04-1999",

}

TY - JOUR

T1 - Doping and oxidation effects in raman spectra of manganites

AU - Podobedov, V. B.

AU - Weber, A.

AU - Dezanneau, G.

AU - Pignard, S.

AU - Kreizel, J.

AU - Vincent, H.

PY - 1999/1/1

Y1 - 1999/1/1

N2 - Roman scattering from LayRxMnO3-δ compounds (single crystals, ceramics, films) was studied as a function of kind (R) and amount (x) of dopant as well as of oxygen deficit (δ). For x = 0.1 to 0.55, a nearly linear Raman shift of the Ag mode from 240 to 125 cm-1 was observed in Sr-doped compounds. While the intensity of disorder-induced Raman bands was found to be sensitive to the oxygen content, the symmetry allowed related Raman modes exhibit the changes in the frequency. As an indication of deposition conditions, lowering of a symmetry of the film structures with respect to single crystals and ceramics was detected. We discuss the physical nature of the observed effects and show how Raman data can be used for the optical characterization of manganite samples.

AB - Roman scattering from LayRxMnO3-δ compounds (single crystals, ceramics, films) was studied as a function of kind (R) and amount (x) of dopant as well as of oxygen deficit (δ). For x = 0.1 to 0.55, a nearly linear Raman shift of the Ag mode from 240 to 125 cm-1 was observed in Sr-doped compounds. While the intensity of disorder-induced Raman bands was found to be sensitive to the oxygen content, the symmetry allowed related Raman modes exhibit the changes in the frequency. As an indication of deposition conditions, lowering of a symmetry of the film structures with respect to single crystals and ceramics was detected. We discuss the physical nature of the observed effects and show how Raman data can be used for the optical characterization of manganite samples.

U2 - 10.1557/proc-574-143

DO - 10.1557/proc-574-143

M3 - Conference article

AN - SCOPUS:0033279208

SN - 0272-9172

VL - 574

SP - 143

EP - 148

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1999 MRS Spring Meeting - Symposium BB: 'Multicomponent Oxide Films for Electronics'

Y2 - 6 April 1999 through 8 April 1999

ER -

Doping and oxidation effects in raman spectra of manganites

Abstract

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