Abstract
It is shown that the anomalous band in dual-beam CPM (DBCPM) spectra of a-Si:H results from a combination of two processes: photocurrent enhancement due to excitations by the probe light from the valence band to the D+ states, and photocucurrent reduction due to excitations by the probe light from the D0 states to the conduction band. Using the DBCPM spectra, we measured the optical transition energy (0.77 eV) and the electron correlation energy (0.16 eV) for the filled D- defects.
| Original language | English |
|---|---|
| Pages (from-to) | 383-386 |
| Number of pages | 4 |
| Journal | Journal of Non-Crystalline Solids |
| Volume | 164-166 |
| Issue number | PART 1 |
| DOIs | |
| Publication status | Published - 2 Dec 1993 |
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