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Dual-beam photocurrent spectra in undoped a-Si:H

  • NEC Research Institute

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

It is shown that the anomalous band in dual-beam CPM (DBCPM) spectra results from a combination of two processes: photocurrent enhancement due to excitations by the probe light from the valence band to the D+ defect states, and photocurrent reduction due to excitations by the probe light from the D0 defect states to the conduction band. From the DBCPM spectra, the electron correlation energy for the (filled) D- defects is determined to be 0.25 eV.

Original languageEnglish
Title of host publicationAmorphous Silicon Technology
PublisherPubl by Materials Research Society
Pages473-478
Number of pages6
ISBN (Print)155899193X, 9781558991934
DOIs
Publication statusPublished - 1 Jan 1993
Externally publishedYes
EventProceedings of the MRS Spring Meeting - San Francisco, CA, USA
Duration: 13 Apr 199316 Apr 1993

Publication series

NameMaterials Research Society Symposium Proceedings
Volume297
ISSN (Print)0272-9172

Conference

ConferenceProceedings of the MRS Spring Meeting
CitySan Francisco, CA, USA
Period13/04/9316/04/93

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