Dual-beam photocurrent spectroscopy in undoped A-Si:H: A method for study of excited deep gap states in thin film semiconductors

J. Z. Liu; G. Lewen; P. Roca I Cabarrocas

doi:10.1117/12.190738

Dual-beam photocurrent spectroscopy in undoped A-Si:H: A method for study of excited deep gap states in thin film semiconductors

J. Z. Liu, G. Lewen, P. Roca I Cabarrocas

NEC Research Institute

Research output: Contribution to journal › Conference article › peer-review

Abstract

We have applied the dual-beam photocurrent spectroscopy to study the excited defect states in a-Si:H. The pump beam is used to create the excited state while the second beam is used as a probe. It is shown that the anomalous band in dual-beam photocurrent spectra of a-Si:H results from a combination of two processes: photocurrent enhancement due to excitations by the probe light from the valence band to the D⁺ states, and photocurrent reduction due to excitations by the probe light from the D⁰ states to the conduction band. Using the dual-beam photocurrent spectra, we measured the optical transition energy (0.77 eV) and the electron correlation energy (0.16 eV) for the filled D^- defects (i. e., excited D⁰ defects). The dual-beam photocurrent spectroscopy may also be used for study of deep gap states in other thin film semiconductors.

Original language	English
Pages (from-to)	125-130
Number of pages	6
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	2364
DOIs	https://doi.org/10.1117/12.190738
Publication status	Published - 26 Oct 1994
Event	2nd International Conference on Thin Film Physics and Applications 1994 - Shanghai, China Duration: 15 Apr 1994 → 17 Apr 1994

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@article{b1ca04d2ca624ae09b873c05ae80c1d6,

title = "Dual-beam photocurrent spectroscopy in undoped A-Si:H: A method for study of excited deep gap states in thin film semiconductors",

abstract = "We have applied the dual-beam photocurrent spectroscopy to study the excited defect states in a-Si:H. The pump beam is used to create the excited state while the second beam is used as a probe. It is shown that the anomalous band in dual-beam photocurrent spectra of a-Si:H results from a combination of two processes: photocurrent enhancement due to excitations by the probe light from the valence band to the D+ states, and photocurrent reduction due to excitations by the probe light from the D0 states to the conduction band. Using the dual-beam photocurrent spectra, we measured the optical transition energy (0.77 eV) and the electron correlation energy (0.16 eV) for the filled D- defects (i. e., excited D0 defects). The dual-beam photocurrent spectroscopy may also be used for study of deep gap states in other thin film semiconductors.",

author = "Liu, \{J. Z.\} and G. Lewen and \{Roca I Cabarrocas\}, P.",

note = "Publisher Copyright: {\textcopyright} 1994 SPIE. All rights reserved.; 2nd International Conference on Thin Film Physics and Applications 1994 ; Conference date: 15-04-1994 Through 17-04-1994",

year = "1994",

month = oct,

day = "26",

doi = "10.1117/12.190738",

language = "English",

volume = "2364",

pages = "125--130",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

}

TY - JOUR

T1 - Dual-beam photocurrent spectroscopy in undoped A-Si:H

T2 - 2nd International Conference on Thin Film Physics and Applications 1994

AU - Liu, J. Z.

AU - Lewen, G.

AU - Roca I Cabarrocas, P.

PY - 1994/10/26

Y1 - 1994/10/26

N2 - We have applied the dual-beam photocurrent spectroscopy to study the excited defect states in a-Si:H. The pump beam is used to create the excited state while the second beam is used as a probe. It is shown that the anomalous band in dual-beam photocurrent spectra of a-Si:H results from a combination of two processes: photocurrent enhancement due to excitations by the probe light from the valence band to the D+ states, and photocurrent reduction due to excitations by the probe light from the D0 states to the conduction band. Using the dual-beam photocurrent spectra, we measured the optical transition energy (0.77 eV) and the electron correlation energy (0.16 eV) for the filled D- defects (i. e., excited D0 defects). The dual-beam photocurrent spectroscopy may also be used for study of deep gap states in other thin film semiconductors.

AB - We have applied the dual-beam photocurrent spectroscopy to study the excited defect states in a-Si:H. The pump beam is used to create the excited state while the second beam is used as a probe. It is shown that the anomalous band in dual-beam photocurrent spectra of a-Si:H results from a combination of two processes: photocurrent enhancement due to excitations by the probe light from the valence band to the D+ states, and photocurrent reduction due to excitations by the probe light from the D0 states to the conduction band. Using the dual-beam photocurrent spectra, we measured the optical transition energy (0.77 eV) and the electron correlation energy (0.16 eV) for the filled D- defects (i. e., excited D0 defects). The dual-beam photocurrent spectroscopy may also be used for study of deep gap states in other thin film semiconductors.

U2 - 10.1117/12.190738

DO - 10.1117/12.190738

M3 - Conference article

AN - SCOPUS:0028755707

SN - 0277-786X

VL - 2364

SP - 125

EP - 130

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

Y2 - 15 April 1994 through 17 April 1994

ER -

Dual-beam photocurrent spectroscopy in undoped A-Si:H: A method for study of excited deep gap states in thin film semiconductors

Abstract

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