Dynamic and nonlinear properties of epitaxial quantum-dot lasers on silicon operating under long- And short-cavity feedback conditions for photonic integrated circuits

This work reports on an investigation of the dynamics of 1.3μm epitaxial quantum dot (QD) lasers on silicon subject to delayed optical feedback. Operating the device under different feedback conditions, we experimentally identify various dynamical states of periodic oscillations. In the long-cavity feedback regime, the device remains chaos-free up to ≈70% (-1.55dB) feedback strength. This remarkable result is in agreement with prior studies and is attributed to the particular design and properties of the QD-based active region. Shortening the external cavity length to the short-cavity regime being on the scale of photonics integrated circuits (PICs), the onset of periodic oscillations only takes place under extremely high feedback strength, which is much higher than those in PICs. The devices studied exhibit strong resistance to chip-scale back reflections in absence of any unstable oscillation. Our results also demonstrate that p doping is an efficient technique to further improve the feedback tolerance. These results point out the potential of QD lasers as an on-chip light source not requiring an optical isolator and gives insights for developing ultrastable silicon transmitters for PIC applications.