Dynamic and transient analysis of silicon-based thin-film transistors: Channel propagation model

The quasi-static approach in the dynamic modeling considers that a thin-film transistor (TFT) reaches the steady-state instantaneously, and how to insert its behavior before steady-state is an important issue. In this paper, dynamic responses of silicon-based TFTs under gate-voltage pulse are studied in details. We experimentally distinguish quasi-static and non-quasi-static cases and we identify two charging regimes of the channel formation: channel propagation and charging of the fully propagated channel. We propose a model for the channel propagation, with a compact model-like approach to take into account the effect of defect states.