Abstract
In this paper, we report the characteristics of InAs/InP quantum dashes (QDash) based lasers emitting around 1.55 μm. An unprecedented high modal gain of ∼ 100 cm-1 is obtained for an optimized active structure by stacking 12 QDash layers. Directly modulated lasers allowed achieving a modulation bandwidth of ∼ 10 GHz and a Henry factor around 5. Thanks to p-type doping, the Henry factor value is reduced down to 2.7 while the modulation bandwidth still amounts to ∼ 10 GHz. This shows that doping of the active region is important to improve the dynamic characteristics of QDash lasers.
| Original language | English |
|---|---|
| Article number | 141113 |
| Journal | Applied Physics Letters |
| Volume | 105 |
| Issue number | 14 |
| DOIs | |
| Publication status | Published - 6 Oct 2014 |
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