TY - JOUR
T1 - Dynamic Characterization of III-Nitride-Based High-Speed Photodiodes
AU - Alshehri, Bandar
AU - Dogheche, Karim
AU - Belahsene, Sofiane
AU - Ramdane, Abderrahim
AU - Patriarche, Gilles
AU - Decoster, Didier
AU - Dogheche, Elhadj
N1 - Publisher Copyright:
© 2009-2012 IEEE.
PY - 2017/8/1
Y1 - 2017/8/1
N2 - The objective of this study is to study, design, and develop a high-speed PIN photodiode based on InxGa1-xN/GaN alloys deposited by metalorganic chemical vapor deposition. The configuration used for the PIN photodiode is based on an absorbing layer composed of In0.1Ga0.9N multiple quantum wells. Structural, microstructural, and optical analyses have been carried out using TEM, PL, and absorption measurement. The design of PIN structures varies with an active surface ranging from 104 to 106 μm2. Static and dynamic characterizations have been performed to qualify the photodiode response. A photocurrent value reaching a maximum of 1.2 mA is reported for a diode of 100 × 100μm2 area, with an external quantum efficiency of 13%. Using the noise measurement technique, the device reveals a -3-dB cutoff frequency of 300 MHz for the same photodiode. This result clearly shows the potential of III-nitride materials for targeting high-speed optoelectronics. The future prospect is to work toward InGaN-based microphotodiodes in order to achieve optical transmission links in the UV-visible range using the same material system.
AB - The objective of this study is to study, design, and develop a high-speed PIN photodiode based on InxGa1-xN/GaN alloys deposited by metalorganic chemical vapor deposition. The configuration used for the PIN photodiode is based on an absorbing layer composed of In0.1Ga0.9N multiple quantum wells. Structural, microstructural, and optical analyses have been carried out using TEM, PL, and absorption measurement. The design of PIN structures varies with an active surface ranging from 104 to 106 μm2. Static and dynamic characterizations have been performed to qualify the photodiode response. A photocurrent value reaching a maximum of 1.2 mA is reported for a diode of 100 × 100μm2 area, with an external quantum efficiency of 13%. Using the noise measurement technique, the device reveals a -3-dB cutoff frequency of 300 MHz for the same photodiode. This result clearly shows the potential of III-nitride materials for targeting high-speed optoelectronics. The future prospect is to work toward InGaN-based microphotodiodes in order to achieve optical transmission links in the UV-visible range using the same material system.
KW - GaN
KW - Photodetectors
KW - bandwidth
KW - fabrication and characterization
UR - https://www.scopus.com/pages/publications/85029468830
U2 - 10.1109/JPHOT.2017.2714168
DO - 10.1109/JPHOT.2017.2714168
M3 - Article
AN - SCOPUS:85029468830
SN - 1943-0655
VL - 9
JO - IEEE Photonics Journal
JF - IEEE Photonics Journal
IS - 4
M1 - 7945255
ER -