Dynamic properties of InAs/InP (311)B Quantum Dot lasers emitting at 1.52 μm

A. Martinez; K. Merghem; J. G. Provost; S. Bouchoule; F. Martin; G. Moreau; F. Grillot; R. Piron; O. Dehaese; K. Tavernier; S. Loualiche; A. Ramdane

doi:10.1109/ISLC.2008.4635997

Dynamic properties of InAs/InP (311)B Quantum Dot lasers emitting at 1.52 μm

A. Martinez
, K. Merghem
, J. G. Provost
, S. Bouchoule
, F. Martin
, G. Moreau
, F. Grillot
, R. Piron
, O. Dehaese
, K. Tavernier
, S. Loualiche
, A. Ramdane

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Microwave frequency properties of truly 3-dimensional confined quantum dot lasers on InP substrate are thoroughly investigated for the first time. A relaxation frequency of 3.7 GHz and a Henry factor of ∼ 7 are measured.

Original language	English
Title of host publication	21st IEEE International Semiconductor Laser Conference, ISLC 2008
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	37-38
Number of pages	2
ISBN (Print)	9781424417834
DOIs	https://doi.org/10.1109/ISLC.2008.4635997
Publication status	Published - 1 Jan 2008
Externally published	Yes
Event	21st IEEE International Semiconductor Laser Conference, ISLC 2008 - Sorrento, Italy Duration: 14 Sept 2008 → 18 Sept 2008

Publication series

Name	Conference Digest - IEEE International Semiconductor Laser Conference
ISSN (Print)	0899-9406

Conference

Conference	21st IEEE International Semiconductor Laser Conference, ISLC 2008
Country/Territory	Italy
City	Sorrento
Period	14/09/08 → 18/09/08

Access to Document

10.1109/ISLC.2008.4635997

Cite this

Martinez, A., Merghem, K., Provost, J. G., Bouchoule, S., Martin, F., Moreau, G., Grillot, F., Piron, R., Dehaese, O., Tavernier, K., Loualiche, S., & Ramdane, A. (2008). Dynamic properties of InAs/InP (311)B Quantum Dot lasers emitting at 1.52 μm. In 21st IEEE International Semiconductor Laser Conference, ISLC 2008 (pp. 37-38). Article 4635997 (Conference Digest - IEEE International Semiconductor Laser Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISLC.2008.4635997

@inproceedings{dd2ea7a554d54f6cbb8090cc0df4841d,

title = "Dynamic properties of InAs/InP (311)B Quantum Dot lasers emitting at 1.52 μm",

abstract = "Microwave frequency properties of truly 3-dimensional confined quantum dot lasers on InP substrate are thoroughly investigated for the first time. A relaxation frequency of 3.7 GHz and a Henry factor of ∼ 7 are measured.",

author = "A. Martinez and K. Merghem and Provost, \{J. G.\} and S. Bouchoule and F. Martin and G. Moreau and F. Grillot and R. Piron and O. Dehaese and K. Tavernier and S. Loualiche and A. Ramdane",

year = "2008",

month = jan,

day = "1",

doi = "10.1109/ISLC.2008.4635997",

language = "English",

isbn = "9781424417834",

series = "Conference Digest - IEEE International Semiconductor Laser Conference",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "37--38",

booktitle = "21st IEEE International Semiconductor Laser Conference, ISLC 2008",

note = "21st IEEE International Semiconductor Laser Conference, ISLC 2008 ; Conference date: 14-09-2008 Through 18-09-2008",

}

Martinez, A, Merghem, K, Provost, JG, Bouchoule, S, Martin, F, Moreau, G, Grillot, F, Piron, R, Dehaese, O, Tavernier, K, Loualiche, S & Ramdane, A 2008, Dynamic properties of InAs/InP (311)B Quantum Dot lasers emitting at 1.52 μm. in 21st IEEE International Semiconductor Laser Conference, ISLC 2008., 4635997, Conference Digest - IEEE International Semiconductor Laser Conference, Institute of Electrical and Electronics Engineers Inc., pp. 37-38, 21st IEEE International Semiconductor Laser Conference, ISLC 2008, Sorrento, Italy, 14/09/08. https://doi.org/10.1109/ISLC.2008.4635997

Dynamic properties of InAs/InP (311)B Quantum Dot lasers emitting at 1.52 μm. / Martinez, A.; Merghem, K.; Provost, J. G. et al.
21st IEEE International Semiconductor Laser Conference, ISLC 2008. Institute of Electrical and Electronics Engineers Inc., 2008. p. 37-38 4635997 (Conference Digest - IEEE International Semiconductor Laser Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Dynamic properties of InAs/InP (311)B Quantum Dot lasers emitting at 1.52 μm

AU - Martinez, A.

AU - Merghem, K.

AU - Provost, J. G.

AU - Bouchoule, S.

AU - Martin, F.

AU - Moreau, G.

AU - Grillot, F.

AU - Piron, R.

AU - Dehaese, O.

AU - Tavernier, K.

AU - Loualiche, S.

AU - Ramdane, A.

PY - 2008/1/1

Y1 - 2008/1/1

N2 - Microwave frequency properties of truly 3-dimensional confined quantum dot lasers on InP substrate are thoroughly investigated for the first time. A relaxation frequency of 3.7 GHz and a Henry factor of ∼ 7 are measured.

AB - Microwave frequency properties of truly 3-dimensional confined quantum dot lasers on InP substrate are thoroughly investigated for the first time. A relaxation frequency of 3.7 GHz and a Henry factor of ∼ 7 are measured.

UR - https://www.scopus.com/pages/publications/56749103193

U2 - 10.1109/ISLC.2008.4635997

DO - 10.1109/ISLC.2008.4635997

M3 - Conference contribution

AN - SCOPUS:56749103193

SN - 9781424417834

T3 - Conference Digest - IEEE International Semiconductor Laser Conference

SP - 37

EP - 38

BT - 21st IEEE International Semiconductor Laser Conference, ISLC 2008

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 21st IEEE International Semiconductor Laser Conference, ISLC 2008

Y2 - 14 September 2008 through 18 September 2008

ER -

Martinez A, Merghem K, Provost JG, Bouchoule S, Martin F, Moreau G et al. Dynamic properties of InAs/InP (311)B Quantum Dot lasers emitting at 1.52 μm. In 21st IEEE International Semiconductor Laser Conference, ISLC 2008. Institute of Electrical and Electronics Engineers Inc. 2008. p. 37-38. 4635997. (Conference Digest - IEEE International Semiconductor Laser Conference). doi: 10.1109/ISLC.2008.4635997

Dynamic properties of InAs/InP (311)B Quantum Dot lasers emitting at 1.52 μm

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