Dynamic saturation in semiconductor optical amplifiers: Accurate model, role of carrier density, and slow light

Perrine Berger; Mehdi Alouini; Jérǒme Bourderionnet; Fabien Bretenaker; Daniel Dolfi

doi:10.1364/OE.18.000685

Dynamic saturation in semiconductor optical amplifiers: Accurate model, role of carrier density, and slow light

Perrine Berger
, Mehdi Alouini
, Jérǒme Bourderionnet
, Fabien Bretenaker
, Daniel Dolfi

Thales Research & Technology
Laboratoire Aimé Cotton
IPR (Institut de Physique de Rennes) - UMR 6251

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

We developed an improved model in order to predict the RF behavior and the slow light properties of the SOA valid for any experimental conditions. It takes into account the dynamic saturation of the SOA, which can be fully characterized by a simple measurement, and only relies on material fitting parameters, independent of the optical intensity and the injected current. The present model is validated by showing a good agreement with experiments for small and large modulation indices.

Original language	English
Pages (from-to)	685-693
Number of pages	9
Journal	Optics Express
Volume	18
Issue number	2
DOIs	https://doi.org/10.1364/OE.18.000685
Publication status	Published - 18 Jan 2010
Externally published	Yes

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10.1364/OE.18.000685

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AU - Bretenaker, Fabien

AU - Dolfi, Daniel

PY - 2010/1/18

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AB - We developed an improved model in order to predict the RF behavior and the slow light properties of the SOA valid for any experimental conditions. It takes into account the dynamic saturation of the SOA, which can be fully characterized by a simple measurement, and only relies on material fitting parameters, independent of the optical intensity and the injected current. The present model is validated by showing a good agreement with experiments for small and large modulation indices.

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Dynamic saturation in semiconductor optical amplifiers: Accurate model, role of carrier density, and slow light

Abstract

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