TY - GEN
T1 - Dynamics of highly excited electrons in 3D and 2D semiconductors
T2 - 2019 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2019
AU - Sjakste, Jelena
AU - Perfetti, Luca
AU - Vast, Nathalie
AU - Tanimura, Katsumi
N1 - Publisher Copyright:
© 2019 IEEE.
PY - 2019/6/1
Y1 - 2019/6/1
N2 - The rapid development of the computational methods based on density functional theory, on the one hand, and of the time-energy-and momentum-resolved spectroscopy, on the other hand, allows today an unprecedently detailed insight into the processes governing hot electron relaxation dynamics, and, in particular, into the role of the electron-phonon coupling [1]. Recently, we have developed a computational method, based on density functional theory and on interpolation of the electron-phonon matrix elements in Wannier space, for the calculation of the electron-phonon coupling in polar materials [2]. This method allowed us to successfully interpret the dynamics of hot electron relaxation in bulk GaAs, in excellent agreement with time- and angle-resolved photoemission experiments. We have demonstrated, for the relaxation of hot carriers in GaAs, the existence of two distinct relaxation regimes, one related with the momentum, and the other with energy relaxation [3]. Interestingly, the energy relaxation times become faster at lower energies [4].
AB - The rapid development of the computational methods based on density functional theory, on the one hand, and of the time-energy-and momentum-resolved spectroscopy, on the other hand, allows today an unprecedently detailed insight into the processes governing hot electron relaxation dynamics, and, in particular, into the role of the electron-phonon coupling [1]. Recently, we have developed a computational method, based on density functional theory and on interpolation of the electron-phonon matrix elements in Wannier space, for the calculation of the electron-phonon coupling in polar materials [2]. This method allowed us to successfully interpret the dynamics of hot electron relaxation in bulk GaAs, in excellent agreement with time- and angle-resolved photoemission experiments. We have demonstrated, for the relaxation of hot carriers in GaAs, the existence of two distinct relaxation regimes, one related with the momentum, and the other with energy relaxation [3]. Interestingly, the energy relaxation times become faster at lower energies [4].
U2 - 10.1109/CLEOE-EQEC.2019.8873208
DO - 10.1109/CLEOE-EQEC.2019.8873208
M3 - Conference contribution
AN - SCOPUS:85074640271
T3 - 2019 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2019
BT - 2019 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2019
PB - Institute of Electrical and Electronics Engineers Inc.
Y2 - 23 June 2019 through 27 June 2019
ER -