Dynamics of hydrogen adsorption on GaAs electrodes

B. H. Erné; F. Ozanam; J. N. Chazalviel

doi:10.1103/PhysRevLett.80.4337

Dynamics of hydrogen adsorption on GaAs electrodes

B. H. Erné
, F. Ozanam
, J. N. Chazalviel

Research output: Contribution to journal › Article › peer-review

Abstract

In situ infrared spectroscopy unravels the dynamics of hydrogen adsorption on GaAs(100) electrodes.Hydrogen cathodically adsorbs at arsenic sites only and replaces As-OH groups present in the anodic range, causing change in the surface dipole potential.The absolute submonolayer coverages depend on potential and result from a competition between cathodic hydrogenation and anodic or chemical hydroxylation.Surface As-H is identified as the intermediate in hydrogen gas evolution.Its electrochemical reduction is the rate-limiting step of the reaction.

Original language	English
Pages (from-to)	4337-4340
Number of pages	4
Journal	Physical Review Letters
Volume	80
Issue number	19
DOIs	https://doi.org/10.1103/PhysRevLett.80.4337
Publication status	Published - 1 Jan 1998

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title = "Dynamics of hydrogen adsorption on GaAs electrodes",

abstract = "In situ infrared spectroscopy unravels the dynamics of hydrogen adsorption on GaAs(100) electrodes.Hydrogen cathodically adsorbs at arsenic sites only and replaces As-OH groups present in the anodic range, causing change in the surface dipole potential.The absolute submonolayer coverages depend on potential and result from a competition between cathodic hydrogenation and anodic or chemical hydroxylation.Surface As-H is identified as the intermediate in hydrogen gas evolution.Its electrochemical reduction is the rate-limiting step of the reaction.",

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N2 - In situ infrared spectroscopy unravels the dynamics of hydrogen adsorption on GaAs(100) electrodes.Hydrogen cathodically adsorbs at arsenic sites only and replaces As-OH groups present in the anodic range, causing change in the surface dipole potential.The absolute submonolayer coverages depend on potential and result from a competition between cathodic hydrogenation and anodic or chemical hydroxylation.Surface As-H is identified as the intermediate in hydrogen gas evolution.Its electrochemical reduction is the rate-limiting step of the reaction.

AB - In situ infrared spectroscopy unravels the dynamics of hydrogen adsorption on GaAs(100) electrodes.Hydrogen cathodically adsorbs at arsenic sites only and replaces As-OH groups present in the anodic range, causing change in the surface dipole potential.The absolute submonolayer coverages depend on potential and result from a competition between cathodic hydrogenation and anodic or chemical hydroxylation.Surface As-H is identified as the intermediate in hydrogen gas evolution.Its electrochemical reduction is the rate-limiting step of the reaction.

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U2 - 10.1103/PhysRevLett.80.4337

DO - 10.1103/PhysRevLett.80.4337

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JO - Physical Review Letters

JF - Physical Review Letters

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Dynamics of hydrogen adsorption on GaAs electrodes

Abstract

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