Effect of high-energy electron irradiation on the electronic properties of β-gallium oxide

Thi Huong Dang; Marcin Konczykowski; Viatcheslav I. Safarov; Elie Hammou; Lucia Romero Vega; Nadège Ollier; Romain Grasset; Antonino Alessi; Henri Jean Drouhin; Henri Jaffrès; Valery Yu Davydov; Agnieszka Wołoś; David J. Rogers; Vinod E. Sandana; Philippe Bove; Féréchteh H. Teherani

doi:10.1117/12.2622559

Effect of high-energy electron irradiation on the electronic properties of β-gallium oxide

Thi Huong Dang
, Marcin Konczykowski
, Viatcheslav I. Safarov
, Elie Hammou
, Lucia Romero Vega
, Nadège Ollier
, Romain Grasset
, Antonino Alessi
, Henri Jean Drouhin
, Henri Jaffrès
, Valery Yu Davydov
, Agnieszka Wołoś
, David J. Rogers
, Vinod E. Sandana
, Philippe Bove
, Féréchteh H. Teherani

Unité Mixte de Physique CNRS/Thales
Ioffe Institute
University of Warsaw
Nanovation Sarl

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Irradiation with high-energy electrons (HEE) at cryogenic temperatures is a subtle tool for shaping matter. Unlike irradiation with heavy particles, e.g. protons, neutrons, or ions, HEE irradiation produces very low local damage generating exclusively point lattice defects. In the interaction process, the primary high-energy electron transfers a minute quantity of energy to a lattice ion, just enough for displacing it from its lattice site. The concentration of induced vacancies depends on the irradiation dose and in this way can be carefully adjusted. Since the lattice defects can act as donor or acceptor states in semiconductors, electron irradiation enables accurately-controlled compensation of electrically-active impurities introduced in a semiconductor crystal during growth. In this article, we present a study of the evolution of electronic properties of β-gallium oxide with step-by-step compensation of initial n-type doping through controlled introduction of point defects (gallium vacancies) produced by a 2.5-MeV electron beam. Our analysis relies on a set of electron paramagnetic resonance, luminescence, and transport data obtained at different temperatures.

Original language	English
Title of host publication	Oxide-based Materials and Devices XIII
Editors	David J. Rogers, Ferechteh H. Teherani
Publisher	SPIE
ISBN (Electronic)	9781510648753
DOIs	https://doi.org/10.1117/12.2622559
Publication status	Published - 1 Jan 2022
Event	Oxide-based Materials and Devices XIII 2022 - Virtual, Online Duration: 20 Feb 2022 → 24 Feb 2022

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	12002
ISSN (Print)	0277-786X
ISSN (Electronic)	1996-756X

Conference

Conference	Oxide-based Materials and Devices XIII 2022
City	Virtual, Online
Period	20/02/22 → 24/02/22

Keywords

doped semiconductor
electron paramagnetic resonance
high-energy electron irradiation
photoluminescence
van der Pawn method
β-gallium oxide

Access to Document

10.1117/12.2622559

Cite this

Dang, T. H., Konczykowski, M., Safarov, V. I., Hammou, E., Romero Vega, L., Ollier, N., Grasset, R., Alessi, A., Drouhin, H. J., Jaffrès, H., Davydov, V. Y., Wołoś, A., Rogers, D. J., Sandana, V. E., Bove, P., & Teherani, F. H. (2022). Effect of high-energy electron irradiation on the electronic properties of β-gallium oxide. In D. J. Rogers, & F. H. Teherani (Eds.), Oxide-based Materials and Devices XIII Article 1200207 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 12002). SPIE. https://doi.org/10.1117/12.2622559

@inproceedings{b907cee18b224e839ff8c314ee78787d,

title = "Effect of high-energy electron irradiation on the electronic properties of β-gallium oxide",

abstract = "Irradiation with high-energy electrons (HEE) at cryogenic temperatures is a subtle tool for shaping matter. Unlike irradiation with heavy particles, e.g. protons, neutrons, or ions, HEE irradiation produces very low local damage generating exclusively point lattice defects. In the interaction process, the primary high-energy electron transfers a minute quantity of energy to a lattice ion, just enough for displacing it from its lattice site. The concentration of induced vacancies depends on the irradiation dose and in this way can be carefully adjusted. Since the lattice defects can act as donor or acceptor states in semiconductors, electron irradiation enables accurately-controlled compensation of electrically-active impurities introduced in a semiconductor crystal during growth. In this article, we present a study of the evolution of electronic properties of β-gallium oxide with step-by-step compensation of initial n-type doping through controlled introduction of point defects (gallium vacancies) produced by a 2.5-MeV electron beam. Our analysis relies on a set of electron paramagnetic resonance, luminescence, and transport data obtained at different temperatures.",

keywords = "doped semiconductor, electron paramagnetic resonance, high-energy electron irradiation, photoluminescence, van der Pawn method, β-gallium oxide",

author = "Dang, \{Thi Huong\} and Marcin Konczykowski and Safarov, \{Viatcheslav I.\} and Elie Hammou and \{Romero Vega\}, Lucia and Nad{\`e}ge Ollier and Romain Grasset and Antonino Alessi and Drouhin, \{Henri Jean\} and Henri Jaffr{\`e}s and Davydov, \{Valery Yu\} and Agnieszka Wo{\l}o{\'s} and Rogers, \{David J.\} and Sandana, \{Vinod E.\} and Philippe Bove and Teherani, \{F{\'e}r{\'e}chteh H.\}",

note = "Publisher Copyright: Copyright {\textcopyright} 2022 SPIE.; Oxide-based Materials and Devices XIII 2022 ; Conference date: 20-02-2022 Through 24-02-2022",

year = "2022",

month = jan,

day = "1",

doi = "10.1117/12.2622559",

language = "English",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

publisher = "SPIE",

editor = "Rogers, \{David J.\} and Teherani, \{Ferechteh H.\}",

booktitle = "Oxide-based Materials and Devices XIII",

}

Dang, TH, Konczykowski, M, Safarov, VI, Hammou, E, Romero Vega, L, Ollier, N, Grasset, R , Alessi, A, Drouhin, HJ, Jaffrès, H, Davydov, VY, Wołoś, A, Rogers, DJ, Sandana, VE, Bove, P & Teherani, FH 2022, Effect of high-energy electron irradiation on the electronic properties of β-gallium oxide. in DJ Rogers & FH Teherani (eds), Oxide-based Materials and Devices XIII., 1200207, Proceedings of SPIE - The International Society for Optical Engineering, vol. 12002, SPIE, Oxide-based Materials and Devices XIII 2022, Virtual, Online, 20/02/22. https://doi.org/10.1117/12.2622559

Effect of high-energy electron irradiation on the electronic properties of β-gallium oxide. / Dang, Thi Huong; Konczykowski, Marcin; Safarov, Viatcheslav I. et al.
Oxide-based Materials and Devices XIII. ed. / David J. Rogers; Ferechteh H. Teherani. SPIE, 2022. 1200207 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 12002).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Effect of high-energy electron irradiation on the electronic properties of β-gallium oxide

AU - Dang, Thi Huong

AU - Konczykowski, Marcin

AU - Safarov, Viatcheslav I.

AU - Hammou, Elie

AU - Romero Vega, Lucia

AU - Ollier, Nadège

AU - Grasset, Romain

AU - Alessi, Antonino

AU - Drouhin, Henri Jean

AU - Jaffrès, Henri

AU - Davydov, Valery Yu

AU - Wołoś, Agnieszka

AU - Rogers, David J.

AU - Sandana, Vinod E.

AU - Bove, Philippe

AU - Teherani, Féréchteh H.

PY - 2022/1/1

Y1 - 2022/1/1

N2 - Irradiation with high-energy electrons (HEE) at cryogenic temperatures is a subtle tool for shaping matter. Unlike irradiation with heavy particles, e.g. protons, neutrons, or ions, HEE irradiation produces very low local damage generating exclusively point lattice defects. In the interaction process, the primary high-energy electron transfers a minute quantity of energy to a lattice ion, just enough for displacing it from its lattice site. The concentration of induced vacancies depends on the irradiation dose and in this way can be carefully adjusted. Since the lattice defects can act as donor or acceptor states in semiconductors, electron irradiation enables accurately-controlled compensation of electrically-active impurities introduced in a semiconductor crystal during growth. In this article, we present a study of the evolution of electronic properties of β-gallium oxide with step-by-step compensation of initial n-type doping through controlled introduction of point defects (gallium vacancies) produced by a 2.5-MeV electron beam. Our analysis relies on a set of electron paramagnetic resonance, luminescence, and transport data obtained at different temperatures.

AB - Irradiation with high-energy electrons (HEE) at cryogenic temperatures is a subtle tool for shaping matter. Unlike irradiation with heavy particles, e.g. protons, neutrons, or ions, HEE irradiation produces very low local damage generating exclusively point lattice defects. In the interaction process, the primary high-energy electron transfers a minute quantity of energy to a lattice ion, just enough for displacing it from its lattice site. The concentration of induced vacancies depends on the irradiation dose and in this way can be carefully adjusted. Since the lattice defects can act as donor or acceptor states in semiconductors, electron irradiation enables accurately-controlled compensation of electrically-active impurities introduced in a semiconductor crystal during growth. In this article, we present a study of the evolution of electronic properties of β-gallium oxide with step-by-step compensation of initial n-type doping through controlled introduction of point defects (gallium vacancies) produced by a 2.5-MeV electron beam. Our analysis relies on a set of electron paramagnetic resonance, luminescence, and transport data obtained at different temperatures.

KW - doped semiconductor

KW - electron paramagnetic resonance

KW - high-energy electron irradiation

KW - photoluminescence

KW - van der Pawn method

KW - β-gallium oxide

U2 - 10.1117/12.2622559

DO - 10.1117/12.2622559

M3 - Conference contribution

AN - SCOPUS:85131226436

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Oxide-based Materials and Devices XIII

A2 - Rogers, David J.

A2 - Teherani, Ferechteh H.

PB - SPIE

T2 - Oxide-based Materials and Devices XIII 2022

Y2 - 20 February 2022 through 24 February 2022

ER -

Effect of high-energy electron irradiation on the electronic properties of β-gallium oxide

Abstract

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Conference

Keywords

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