@inproceedings{9279a8cd31c64e5782974f55e382c854,
title = "EFFECT OF IMPURITIES IN THE SPE KINETICS IN GaAs.",
abstract = "Solid phase epitaxial (SPE) growth of ion implanted GaAs layers has been studied using the time resolved reflectivity technique. A series of implanted impurities have been selected to study the dependence of the nature of the impurity on the growth kinetics. It has been found that the activation energy and the kinetics of growth were independent on the choice of implanted substitutional impurity. Only impurities such as Argon were responsible of a large decrease in the regrowth rate. The same technique is shown to provide data on the amorphous-crystal interface structure during growth. From these data it has been possible to show that interface roughening occurred during SPE in (100) GaAs. This interface evolution is an intrinsic property of the implanted GaAs material.",
author = "C. Licoppe and Nissim, \{Y. I.\} and C. Meriadec",
year = "1986",
month = dec,
day = "1",
language = "English",
isbn = "0931837170",
series = "Materials Research Society Symposia Proceedings",
publisher = "Materials Research Soc",
pages = "369--374",
editor = "Sedgwick, \{Thomas O.\} and Seidel, \{Thomas E.\} and Bor-Yeu Tsaur",
booktitle = "Materials Research Society Symposia Proceedings",
}