Effect of intrinsic capacitances and time necessary for channel creation in silicon-based thin-film transistors

  • Jong Woo Jin
  • , Jean Charles Vanel
  • , Dmitri Daineka
  • , Yvan Bonnassieux
  • , Sabri Janfaoui
  • , Khalid Kandoussi
  • , Nathalie Coulon
  • , Tayeb Mohammed-Brahim

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We present the study of the dynamic response of silicon-based thin-film transistors under the voltage change, focusing on the time necessary to form the channel. Every detail of the current response-time curve is discussed by analyzing the intrinsic capacitances of thin-film transistors in on and off state and in linear and saturation mode. The method used in this work allows the visualization of the beginning of the channel conduction and the end of the channel formation process. We show the dependence of the channel creation time on geometrical parameters, applied voltage, material and structure. For this purpose, we use experimental results of the dynamic measurement and 2D finite elements simulation.

Original languageEnglish
Title of host publicationProceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012
Pages325-328
Number of pages4
Publication statusPublished - 31 Oct 2012
Event19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012 - Kyoto, Japan
Duration: 4 Jul 20126 Jul 2012

Publication series

NameProceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012

Conference

Conference19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012
Country/TerritoryJapan
CityKyoto
Period4/07/126/07/12

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