TY - GEN
T1 - Effect of irradiation temperature on the radiation induced attenuation of Ge-doped fibers
AU - Alessi, A.
AU - DI Francesca, D.
AU - Girard, S.
AU - Agnello, S.
AU - Cannas, M.
AU - Reghioua, I.
AU - Martin-Samos, L.
AU - Marcandella, C.
AU - Richard, N.
AU - Paillet, P.
AU - Boukenter, A.
AU - Ouerdane, Y.
N1 - Publisher Copyright:
© 2016 IEEE.
PY - 2017/10/31
Y1 - 2017/10/31
N2 - The UV-visible radiation induced attenuation (RIA) was studied in Ge-doped optical fibers, during X-ray (10 keV) irradiations at different temperatures. By comparing the spectra recorded in dissimilarly irradiated samples we evidenced the impact of the irradiation temperature. In details, we highlighted that, from a certain dose, increasing the temperature the RIA decreases for wavelengths lower than 470 nm, whereas at higher wavelengths the RIA depends only on the dose. Such findings suggest that it is possible to distinguish the irradiation temperature by comparing the signal at two different wavelengths. From the microscopic point of view, it appears that the RIA behavior is mainly related to a dissimilar content of induced Ge(1) defects, whereas the so called GeX defects features only small variations. The impact of the irradiation temperature on the Ge(1) induced concentration, as a function of the irradiation temperature, is confirmed by the post-irradiation electron paramagnetic resonance measurements that we acquired for samples that were irradiated at room temperature and at 200 °C.
AB - The UV-visible radiation induced attenuation (RIA) was studied in Ge-doped optical fibers, during X-ray (10 keV) irradiations at different temperatures. By comparing the spectra recorded in dissimilarly irradiated samples we evidenced the impact of the irradiation temperature. In details, we highlighted that, from a certain dose, increasing the temperature the RIA decreases for wavelengths lower than 470 nm, whereas at higher wavelengths the RIA depends only on the dose. Such findings suggest that it is possible to distinguish the irradiation temperature by comparing the signal at two different wavelengths. From the microscopic point of view, it appears that the RIA behavior is mainly related to a dissimilar content of induced Ge(1) defects, whereas the so called GeX defects features only small variations. The impact of the irradiation temperature on the Ge(1) induced concentration, as a function of the irradiation temperature, is confirmed by the post-irradiation electron paramagnetic resonance measurements that we acquired for samples that were irradiated at room temperature and at 200 °C.
KW - optical fiber testing
KW - optical loss
KW - point defects
KW - radiation effects
U2 - 10.1109/RADECS.2016.8093134
DO - 10.1109/RADECS.2016.8093134
M3 - Conference contribution
AN - SCOPUS:85043593709
T3 - Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS
SP - 1
EP - 5
BT - 2016 16th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2016
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 16th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2016
Y2 - 19 September 2016 through 23 September 2016
ER -