Effect of layer stacking and p -type doping on the performance of InAs/InP quantum-dash-in-a-well lasers emitting at 1.55 μm

G. Moreau; S. Azouigui; D. Y. Cong; K. Merghem; A. Martinez; G. Patriarche; A. Ramdane; F. Lelarge; B. Rousseau; B. Dagens; F. Poingt; A. Accard; F. Pommereau

doi:10.1063/1.2408631

Effect of layer stacking and p -type doping on the performance of InAs/InP quantum-dash-in-a-well lasers emitting at 1.55 μm

G. Moreau
, S. Azouigui
, D. Y. Cong
, K. Merghem
, A. Martinez
, G. Patriarche
, A. Ramdane
, F. Lelarge
, B. Rousseau
, B. Dagens
, F. Poingt
, A. Accard
, F. Pommereau

Research output: Contribution to journal › Article › peer-review

Abstract

The authors report the growth of 6-, 9-, and 12-layer InAsInP quantum-dash-in-a-well (DWELL) laser structures using gas source molecular beam epitaxy. Broad area laser performance has been investigated as a function of number of layers. The highest modal gain at 48 cm-1 is achieved for an optimized nine-DWELL layer structure. The effect of layer stacking and p -type doping on the characteristic temperature is also reported. Nine-DWELL layer single mode ridge waveguide lasers showed high slope efficiency (0.2 WA per facet) and output power (Pout =20 mW), close to those of conventional quantum well devices.

Original language	English
Article number	241123
Journal	Applied Physics Letters
Volume	89
Issue number	24
DOIs	https://doi.org/10.1063/1.2408631
Publication status	Published - 1 Jan 2006
Externally published	Yes

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10.1063/1.2408631

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Moreau, G., Azouigui, S., Cong, D. Y., Merghem, K., Martinez, A., Patriarche, G., Ramdane, A., Lelarge, F., Rousseau, B., Dagens, B., Poingt, F., Accard, A., & Pommereau, F. (2006). Effect of layer stacking and p -type doping on the performance of InAs/InP quantum-dash-in-a-well lasers emitting at 1.55 μm. Applied Physics Letters, 89(24), Article 241123. https://doi.org/10.1063/1.2408631

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title = "Effect of layer stacking and p -type doping on the performance of InAs/InP quantum-dash-in-a-well lasers emitting at 1.55 μm",

abstract = "The authors report the growth of 6-, 9-, and 12-layer InAsInP quantum-dash-in-a-well (DWELL) laser structures using gas source molecular beam epitaxy. Broad area laser performance has been investigated as a function of number of layers. The highest modal gain at 48 cm-1 is achieved for an optimized nine-DWELL layer structure. The effect of layer stacking and p -type doping on the characteristic temperature is also reported. Nine-DWELL layer single mode ridge waveguide lasers showed high slope efficiency (0.2 WA per facet) and output power (Pout =20 mW), close to those of conventional quantum well devices.",

author = "G. Moreau and S. Azouigui and Cong, \{D. Y.\} and K. Merghem and A. Martinez and G. Patriarche and A. Ramdane and F. Lelarge and B. Rousseau and B. Dagens and F. Poingt and A. Accard and F. Pommereau",

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Moreau, G, Azouigui, S, Cong, DY, Merghem, K, Martinez, A, Patriarche, G, Ramdane, A, Lelarge, F, Rousseau, B, Dagens, B, Poingt, F, Accard, A & Pommereau, F 2006, 'Effect of layer stacking and p -type doping on the performance of InAs/InP quantum-dash-in-a-well lasers emitting at 1.55 μm', Applied Physics Letters, vol. 89, no. 24, 241123. https://doi.org/10.1063/1.2408631

TY - JOUR

T1 - Effect of layer stacking and p -type doping on the performance of InAs/InP quantum-dash-in-a-well lasers emitting at 1.55 μm

AU - Moreau, G.

AU - Azouigui, S.

AU - Cong, D. Y.

AU - Merghem, K.

AU - Martinez, A.

AU - Patriarche, G.

AU - Ramdane, A.

AU - Lelarge, F.

AU - Rousseau, B.

AU - Dagens, B.

AU - Poingt, F.

AU - Accard, A.

AU - Pommereau, F.

PY - 2006/1/1

Y1 - 2006/1/1

N2 - The authors report the growth of 6-, 9-, and 12-layer InAsInP quantum-dash-in-a-well (DWELL) laser structures using gas source molecular beam epitaxy. Broad area laser performance has been investigated as a function of number of layers. The highest modal gain at 48 cm-1 is achieved for an optimized nine-DWELL layer structure. The effect of layer stacking and p -type doping on the characteristic temperature is also reported. Nine-DWELL layer single mode ridge waveguide lasers showed high slope efficiency (0.2 WA per facet) and output power (Pout =20 mW), close to those of conventional quantum well devices.

AB - The authors report the growth of 6-, 9-, and 12-layer InAsInP quantum-dash-in-a-well (DWELL) laser structures using gas source molecular beam epitaxy. Broad area laser performance has been investigated as a function of number of layers. The highest modal gain at 48 cm-1 is achieved for an optimized nine-DWELL layer structure. The effect of layer stacking and p -type doping on the characteristic temperature is also reported. Nine-DWELL layer single mode ridge waveguide lasers showed high slope efficiency (0.2 WA per facet) and output power (Pout =20 mW), close to those of conventional quantum well devices.

U2 - 10.1063/1.2408631

DO - 10.1063/1.2408631

M3 - Article

AN - SCOPUS:33845756793

SN - 0003-6951

VL - 89

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 24

M1 - 241123

ER -

Effect of layer stacking and p -type doping on the performance of InAs/InP quantum-dash-in-a-well lasers emitting at 1.55 μm

Abstract

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