Effect of stack number on the threshold current density and emission wavelength in quantum dash/dot lasers

D. Zhou; R. Piron; M. Dontabactouny; E. Homeyer; O. Dehaese; T. Batte; M. Gicquel; F. Grillot; K. Tavernier; J. Even; S. Loualiche

doi:10.1002/pssc.200881729

Effect of stack number on the threshold current density and emission wavelength in quantum dash/dot lasers

D. Zhou, R. Piron, M. Dontabactouny, E. Homeyer, O. Dehaese, T. Batte, M. Gicquel, F. Grillot, K. Tavernier, J. Even, S. Loualiche

Institut FOTON-UMR6082

Research output: Contribution to journal › Conference article › peer-review

Abstract

InAs quantum dash and dot (QDH and QD) lasers grown by molecular beam epitaxy on InP substrate are studied. The grown lasers with active zone containing multiple stacked layers exhibit lasing wavelength at 1.55 μm. On these devices, the experimental threshold current density reaches its minimum value for a double stacked QDH/QD structure. Other basic laser properties like gain and quantum efficiency are compared. QD lasers exhibit better threshold current densities but equivalent modal gain per layer than QDH. Finally, the analysis of the modal gain on QD laser structures shows a promising potential for improvement of the laser properties.

Original language	English
Pages (from-to)	2217-2221
Number of pages	5
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	6
Issue number	10
DOIs	https://doi.org/10.1002/pssc.200881729
Publication status	Published - 7 Dec 2009
Externally published	Yes
Event	9th International Conference Trends in Nanotechnology, TNT2008 - Oviedo, Spain Duration: 1 Sept 2008 → 5 Sept 2008

Access to Document

10.1002/pssc.200881729

Cite this

Zhou, D., Piron, R., Dontabactouny, M., Homeyer, E., Dehaese, O., Batte, T., Gicquel, M., Grillot, F., Tavernier, K., Even, J., & Loualiche, S. (2009). Effect of stack number on the threshold current density and emission wavelength in quantum dash/dot lasers. Physica Status Solidi (C) Current Topics in Solid State Physics, 6(10), 2217-2221. https://doi.org/10.1002/pssc.200881729

@article{60e2395e07c3495db4d154e6f4656776,

title = "Effect of stack number on the threshold current density and emission wavelength in quantum dash/dot lasers",

abstract = "InAs quantum dash and dot (QDH and QD) lasers grown by molecular beam epitaxy on InP substrate are studied. The grown lasers with active zone containing multiple stacked layers exhibit lasing wavelength at 1.55 μm. On these devices, the experimental threshold current density reaches its minimum value for a double stacked QDH/QD structure. Other basic laser properties like gain and quantum efficiency are compared. QD lasers exhibit better threshold current densities but equivalent modal gain per layer than QDH. Finally, the analysis of the modal gain on QD laser structures shows a promising potential for improvement of the laser properties.",

author = "D. Zhou and R. Piron and M. Dontabactouny and E. Homeyer and O. Dehaese and T. Batte and M. Gicquel and F. Grillot and K. Tavernier and J. Even and S. Loualiche",

year = "2009",

month = dec,

day = "7",

doi = "10.1002/pssc.200881729",

language = "English",

volume = "6",

pages = "2217--2221",

journal = "Physica Status Solidi (C) Current Topics in Solid State Physics",

issn = "1862-6351",

number = "10",

note = "9th International Conference Trends in Nanotechnology, TNT2008 ; Conference date: 01-09-2008 Through 05-09-2008",

}

Zhou, D, Piron, R, Dontabactouny, M, Homeyer, E, Dehaese, O, Batte, T, Gicquel, M, Grillot, F, Tavernier, K, Even, J & Loualiche, S 2009, 'Effect of stack number on the threshold current density and emission wavelength in quantum dash/dot lasers', Physica Status Solidi (C) Current Topics in Solid State Physics, vol. 6, no. 10, pp. 2217-2221. https://doi.org/10.1002/pssc.200881729

TY - JOUR

T1 - Effect of stack number on the threshold current density and emission wavelength in quantum dash/dot lasers

AU - Zhou, D.

AU - Piron, R.

AU - Dontabactouny, M.

AU - Homeyer, E.

AU - Dehaese, O.

AU - Batte, T.

AU - Gicquel, M.

AU - Grillot, F.

AU - Tavernier, K.

AU - Even, J.

AU - Loualiche, S.

PY - 2009/12/7

Y1 - 2009/12/7

N2 - InAs quantum dash and dot (QDH and QD) lasers grown by molecular beam epitaxy on InP substrate are studied. The grown lasers with active zone containing multiple stacked layers exhibit lasing wavelength at 1.55 μm. On these devices, the experimental threshold current density reaches its minimum value for a double stacked QDH/QD structure. Other basic laser properties like gain and quantum efficiency are compared. QD lasers exhibit better threshold current densities but equivalent modal gain per layer than QDH. Finally, the analysis of the modal gain on QD laser structures shows a promising potential for improvement of the laser properties.

AB - InAs quantum dash and dot (QDH and QD) lasers grown by molecular beam epitaxy on InP substrate are studied. The grown lasers with active zone containing multiple stacked layers exhibit lasing wavelength at 1.55 μm. On these devices, the experimental threshold current density reaches its minimum value for a double stacked QDH/QD structure. Other basic laser properties like gain and quantum efficiency are compared. QD lasers exhibit better threshold current densities but equivalent modal gain per layer than QDH. Finally, the analysis of the modal gain on QD laser structures shows a promising potential for improvement of the laser properties.

U2 - 10.1002/pssc.200881729

DO - 10.1002/pssc.200881729

M3 - Conference article

AN - SCOPUS:70949091214

SN - 1862-6351

VL - 6

SP - 2217

EP - 2221

JO - Physica Status Solidi (C) Current Topics in Solid State Physics

JF - Physica Status Solidi (C) Current Topics in Solid State Physics

IS - 10

T2 - 9th International Conference Trends in Nanotechnology, TNT2008

Y2 - 1 September 2008 through 5 September 2008

ER -

Effect of stack number on the threshold current density and emission wavelength in quantum dash/dot lasers

Abstract

Access to Document

Fingerprint

Cite this