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Effect of the Pauli principle on photoelectron spin transport in p+ GaAs

  • Institut d'Electronique de Microélectronique et de Nanotechnologie (IEMN)

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In p+ GaAs thin films, under excitation by a tightly-focussed laser, the spatial profile of the spin polarization is monitored as a function of excitation power. It is found that photoelectron diffusion depends on spin, as a direct consequence of the Pauli principle which causes a concentration dependence of the spin stiffness. Thermoelectric currents are also predicted to depend on spin under degeneracy (spin Soret currents), but these currents play a relatively small role in this case. The spin dependence of the mobility is also found weak. Conversely, ambipolar coupling with holes increases the steady-state photo-electron density at the place of excitation and therefore the amplitude of the degeneracy-induced polarization decrease at the place of excitation.

Original languageEnglish
Title of host publicationSpintronics VIII
EditorsHenri-Jean Drouhin, Jean-Eric Wegrowe, Manijeh Razeghi
PublisherSPIE
ISBN (Electronic)9781628417173
DOIs
Publication statusPublished - 1 Jan 2015
EventSpintronics VIII - San Diego, United States
Duration: 9 Aug 201513 Aug 2015

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume9551
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

ConferenceSpintronics VIII
Country/TerritoryUnited States
CitySan Diego
Period9/08/1513/08/15

Keywords

  • Diffusion
  • Polarization
  • Spin transport

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