Effect of the Spatial Gain and Intensity Variations on a Two-Section Fabry-Perot Semiconductor Laser: An Analytical Study

Bruno J. Thedrez; Chi H. Lee

doi:10.1109/3.206570

Effect of the Spatial Gain and Intensity Variations on a Two-Section Fabry-Perot Semiconductor Laser: An Analytical Study

Bruno J. Thedrez, Chi H. Lee

University of Maryland

Research output: Contribution to journal › Comment/debate

Abstract

An analytical static model for two-section Fabry-Perot semiconductor lasers is presented. The spatial dependence of both the field and the gain is fully taken into account. The cases of either a loss or a gain segment coupled to a main gain section are both considered. The bistable and linear behaviors above threshold are analytically described. Models with no spatial dependence are also discussed. The validity of the model extends to any homogeneously broadened laser.

Original language	English
Pages (from-to)	864-876
Number of pages	13
Journal	IEEE Journal of Quantum Electronics
Volume	29
Issue number	3
DOIs	https://doi.org/10.1109/3.206570
Publication status	Published - 1 Jan 1993
Externally published	Yes

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title = "Effect of the Spatial Gain and Intensity Variations on a Two-Section Fabry-Perot Semiconductor Laser: An Analytical Study",

abstract = "An analytical static model for two-section Fabry-Perot semiconductor lasers is presented. The spatial dependence of both the field and the gain is fully taken into account. The cases of either a loss or a gain segment coupled to a main gain section are both considered. The bistable and linear behaviors above threshold are analytically described. Models with no spatial dependence are also discussed. The validity of the model extends to any homogeneously broadened laser.",

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year = "1993",

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T2 - An Analytical Study

AU - Thedrez, Bruno J.

AU - Lee, Chi H.

PY - 1993/1/1

Y1 - 1993/1/1

N2 - An analytical static model for two-section Fabry-Perot semiconductor lasers is presented. The spatial dependence of both the field and the gain is fully taken into account. The cases of either a loss or a gain segment coupled to a main gain section are both considered. The bistable and linear behaviors above threshold are analytically described. Models with no spatial dependence are also discussed. The validity of the model extends to any homogeneously broadened laser.

AB - An analytical static model for two-section Fabry-Perot semiconductor lasers is presented. The spatial dependence of both the field and the gain is fully taken into account. The cases of either a loss or a gain segment coupled to a main gain section are both considered. The bistable and linear behaviors above threshold are analytically described. Models with no spatial dependence are also discussed. The validity of the model extends to any homogeneously broadened laser.

UR - https://www.scopus.com/pages/publications/0027557591

U2 - 10.1109/3.206570

DO - 10.1109/3.206570

M3 - Comment/debate

AN - SCOPUS:0027557591

SN - 0018-9197

VL - 29

SP - 864

EP - 876

JO - IEEE Journal of Quantum Electronics

JF - IEEE Journal of Quantum Electronics

IS - 3

ER -

Effect of the Spatial Gain and Intensity Variations on a Two-Section Fabry-Perot Semiconductor Laser: An Analytical Study

Abstract

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