Effect of thermal coupling on the electronic properties of hydrogenated amorphous silicon thin films deposited by electron cyclotron resonance

T. H. Dao; M. E. Gueunier-Farret; D. Daineka; P. Bulkin; P. Roca i Cabarrocas; J. P. Kleider; C. Longeaud; C. Bazin; T. Kervyn de Meerendre; P. Descamps; P. Leempoel

doi:10.1016/j.tsf.2006.11.105

Effect of thermal coupling on the electronic properties of hydrogenated amorphous silicon thin films deposited by electron cyclotron resonance

T. H. Dao, M. E. Gueunier-Farret, D. Daineka, P. Bulkin, P. Roca i Cabarrocas, J. P. Kleider, C. Longeaud, C. Bazin, T. Kervyn de Meerendre, P. Descamps, P. Leempoel

Research output: Contribution to journal › Article › peer-review

Abstract

In photovoltaic devices, rather thin intrinsic layers of good quality materials are required and high deposition rates are a key point for a cost-effective mass production. In a previous study we have shown that good quality amorphous silicon (a-Si:H) films can be deposited by matrix distributed electron cyclotron resonance (MDECR) plasma CVD at very high deposition rates (∼ 2.5 nm/s). However, only thick films (> 1 μm) exhibited good transport properties. A very poor thermal coupling between the substrate holder and the substrate is the main reason for such a behaviour. We present here experimental data which support this conclusion as well as the improved transport and defect-related properties of new very thin a-Si:H samples (thickness around 0.3 μm) deposited at a higher temperature than the previous ones.

Original language	English
Pages (from-to)	7650-7653
Number of pages	4
Journal	Thin Solid Films
Volume	515
Issue number	19 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.tsf.2006.11.105
Publication status	Published - 16 Jul 2007

Keywords

Amorphous silicon
High deposition rates
Substrate temperature
Transport properties

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1016/j.tsf.2006.11.105

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Dao, T. H., Gueunier-Farret, M. E., Daineka, D., Bulkin, P., Roca i Cabarrocas, P., Kleider, J. P., Longeaud, C., Bazin, C., Kervyn de Meerendre, T., Descamps, P., & Leempoel, P. (2007). Effect of thermal coupling on the electronic properties of hydrogenated amorphous silicon thin films deposited by electron cyclotron resonance. Thin Solid Films, 515(19 SPEC. ISS.), 7650-7653. https://doi.org/10.1016/j.tsf.2006.11.105

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title = "Effect of thermal coupling on the electronic properties of hydrogenated amorphous silicon thin films deposited by electron cyclotron resonance",

abstract = "In photovoltaic devices, rather thin intrinsic layers of good quality materials are required and high deposition rates are a key point for a cost-effective mass production. In a previous study we have shown that good quality amorphous silicon (a-Si:H) films can be deposited by matrix distributed electron cyclotron resonance (MDECR) plasma CVD at very high deposition rates (∼ 2.5 nm/s). However, only thick films (> 1 μm) exhibited good transport properties. A very poor thermal coupling between the substrate holder and the substrate is the main reason for such a behaviour. We present here experimental data which support this conclusion as well as the improved transport and defect-related properties of new very thin a-Si:H samples (thickness around 0.3 μm) deposited at a higher temperature than the previous ones.",

keywords = "Amorphous silicon, High deposition rates, Substrate temperature, Transport properties",

author = "Dao, \{T. H.\} and Gueunier-Farret, \{M. E.\} and D. Daineka and P. Bulkin and \{Roca i Cabarrocas\}, P. and Kleider, \{J. P.\} and C. Longeaud and C. Bazin and \{Kervyn de Meerendre\}, T. and P. Descamps and P. Leempoel",

year = "2007",

month = jul,

day = "16",

doi = "10.1016/j.tsf.2006.11.105",

language = "English",

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journal = "Thin Solid Films",

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Dao, TH, Gueunier-Farret, ME, Daineka, D, Bulkin, P, Roca i Cabarrocas, P, Kleider, JP, Longeaud, C, Bazin, C, Kervyn de Meerendre, T, Descamps, P & Leempoel, P 2007, 'Effect of thermal coupling on the electronic properties of hydrogenated amorphous silicon thin films deposited by electron cyclotron resonance', Thin Solid Films, vol. 515, no. 19 SPEC. ISS., pp. 7650-7653. https://doi.org/10.1016/j.tsf.2006.11.105

TY - JOUR

T1 - Effect of thermal coupling on the electronic properties of hydrogenated amorphous silicon thin films deposited by electron cyclotron resonance

AU - Dao, T. H.

AU - Gueunier-Farret, M. E.

AU - Daineka, D.

AU - Bulkin, P.

AU - Roca i Cabarrocas, P.

AU - Kleider, J. P.

AU - Longeaud, C.

AU - Bazin, C.

AU - Kervyn de Meerendre, T.

AU - Descamps, P.

AU - Leempoel, P.

PY - 2007/7/16

Y1 - 2007/7/16

N2 - In photovoltaic devices, rather thin intrinsic layers of good quality materials are required and high deposition rates are a key point for a cost-effective mass production. In a previous study we have shown that good quality amorphous silicon (a-Si:H) films can be deposited by matrix distributed electron cyclotron resonance (MDECR) plasma CVD at very high deposition rates (∼ 2.5 nm/s). However, only thick films (> 1 μm) exhibited good transport properties. A very poor thermal coupling between the substrate holder and the substrate is the main reason for such a behaviour. We present here experimental data which support this conclusion as well as the improved transport and defect-related properties of new very thin a-Si:H samples (thickness around 0.3 μm) deposited at a higher temperature than the previous ones.

AB - In photovoltaic devices, rather thin intrinsic layers of good quality materials are required and high deposition rates are a key point for a cost-effective mass production. In a previous study we have shown that good quality amorphous silicon (a-Si:H) films can be deposited by matrix distributed electron cyclotron resonance (MDECR) plasma CVD at very high deposition rates (∼ 2.5 nm/s). However, only thick films (> 1 μm) exhibited good transport properties. A very poor thermal coupling between the substrate holder and the substrate is the main reason for such a behaviour. We present here experimental data which support this conclusion as well as the improved transport and defect-related properties of new very thin a-Si:H samples (thickness around 0.3 μm) deposited at a higher temperature than the previous ones.

KW - Amorphous silicon

KW - High deposition rates

KW - Substrate temperature

KW - Transport properties

U2 - 10.1016/j.tsf.2006.11.105

DO - 10.1016/j.tsf.2006.11.105

M3 - Article

AN - SCOPUS:34547580642

SN - 0040-6090

VL - 515

SP - 7650

EP - 7653

JO - Thin Solid Films

JF - Thin Solid Films

IS - 19 SPEC. ISS.

ER -

Effect of thermal coupling on the electronic properties of hydrogenated amorphous silicon thin films deposited by electron cyclotron resonance

Abstract

Keywords

UN SDGs

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