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Effect of Van Hove singularities in the onset of pseudogap states in Mott insulators

  • Centre national de la recherche scientifique
  • School of Physics
  • Sun Yat-Sen University
  • Collège de France
  • Harvard University
  • Center for Computational Quantum Physics
  • Flatiron Institute
  • University of Geneva

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)

Abstract

The Mott insulating phase of parent compounds is frequently taken as a starting point for underdoped high-Tc cuprate superconductors. In particular, the pseudogap state is often considered as deriving from the Mott insulator. In this work, we systematically investigate different weakly doped Mott insulators on a square and triangular lattice to clarify the relationship between the pseudogap and Mottness. We show that doping a two-dimensional Mott insulator does not necessarily lead to a pseudogap phase. Despite its inherent strong-coupling nature, we find that the existence or absence of a pseudogap depends sensitively on noninteracting band parameters, and we identify the crucial role played by the van Hove singularities of the system. Motivated by a SU(2) gauge theory for the pseudogap state, we propose and verify numerically a simple equation that governs the evolution of characteristic features in the electronic scattering rate.

Original languageEnglish
Article number033067
JournalPhysical Review Research
Volume2
Issue number3
DOIs
Publication statusPublished - 14 Jul 2020

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