Effect of wettability on the agglomeration of silicon nanowire arrays fabricated by metal-assisted chemical etching

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Abstract

The effect of wettability on the undesirable bundling of silicon nanowire (SiNW) arrays fabricated by metal-assisted chemical etching (MACE) method is investigated. This paper reports a simple and low-cost approach to achieve dense SiNW arrays with excellent lateral separation. A hydrophilic pretreatment on the initial wafer substrate prior to the etching procedure, followed by a hydrophobic post-treatment of the fabricated SiNWs, allows the fabrication of large and dense arrays of SiNWs with no agglomeration. These results are discussed within the framework of the detailed balance of forces acting on the nanowires.

Original languageEnglish
Pages (from-to)10290-10298
Number of pages9
JournalLangmuir
Volume30
Issue number34
DOIs
Publication statusPublished - 2 Sept 2014

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