TY - JOUR
T1 - Effective module level encapsulation of CIGS solar cells with Al2O3 thin film grown by atomic layer deposition
AU - Zhang, Shan Ting
AU - Guc, Maxim
AU - Salomon, Oliver
AU - Wuerz, Roland
AU - Izquierdo-Roca, Victor
AU - Pérez-Rodríguez, Alejandro
AU - Kessler, Friedrich
AU - Hempel, Wolfram
AU - Hildebrandt, Thibaud
AU - Schneider, Nathanaelle
N1 - Publisher Copyright:
© 2020 Elsevier B.V.
PY - 2021/4/1
Y1 - 2021/4/1
N2 - An effective encapsulation solution for flexible CIGS is urgently needed to ensure a competitive market entry of the technology. In this work, we demonstrate the feasibility to effectively encapsulate module-level (10 × 10 cm2) CIGS/glass solar cells by employing a thin Al2O3 barrier layer grown by atomic layer deposition (ALD). As determined by a direct methodology, 10 nm ALD-Al2O3 is proved to be sufficient in preventing electrical degradation of the Al:ZnO (AZO) window layer upon exposure to damp heat test (DHT) and equally effective to encapsulate 10 × 10 cm2 CIGS/glass mini-modules by efficient blockage of moisture ingress. CIGS mini-modules encapsulated by ALD-Al2O3 barrier layer retain an average of 80% and 72% of initial efficiency after 1000 and 2000 h of DHT, respectively. Whereas unencapsulated modules drop to an average of 67% (1000 h DHT) and 22% (2000 h DHT) of initial efficiency. Thanks to the presence of ALD-Al2O3 barrier layer, less electrical degradation occurred in AZO window layer and P3 interconnection; also less shunting paths appeared – both led to a lower FF drop in encapsulated CIGS mini-modules. However, an issue of Na migration out of the CIGS layer is observed, which negatively impacts the module stability during DHT.
AB - An effective encapsulation solution for flexible CIGS is urgently needed to ensure a competitive market entry of the technology. In this work, we demonstrate the feasibility to effectively encapsulate module-level (10 × 10 cm2) CIGS/glass solar cells by employing a thin Al2O3 barrier layer grown by atomic layer deposition (ALD). As determined by a direct methodology, 10 nm ALD-Al2O3 is proved to be sufficient in preventing electrical degradation of the Al:ZnO (AZO) window layer upon exposure to damp heat test (DHT) and equally effective to encapsulate 10 × 10 cm2 CIGS/glass mini-modules by efficient blockage of moisture ingress. CIGS mini-modules encapsulated by ALD-Al2O3 barrier layer retain an average of 80% and 72% of initial efficiency after 1000 and 2000 h of DHT, respectively. Whereas unencapsulated modules drop to an average of 67% (1000 h DHT) and 22% (2000 h DHT) of initial efficiency. Thanks to the presence of ALD-Al2O3 barrier layer, less electrical degradation occurred in AZO window layer and P3 interconnection; also less shunting paths appeared – both led to a lower FF drop in encapsulated CIGS mini-modules. However, an issue of Na migration out of the CIGS layer is observed, which negatively impacts the module stability during DHT.
KW - ALD
KW - AlO
KW - CIGS module
KW - Damp heat test (DHT)
KW - Encapsulation
KW - Raman scattering
U2 - 10.1016/j.solmat.2020.110914
DO - 10.1016/j.solmat.2020.110914
M3 - Article
AN - SCOPUS:85098233835
SN - 0927-0248
VL - 222
JO - Solar Energy Materials and Solar Cells
JF - Solar Energy Materials and Solar Cells
M1 - 110914
ER -