Effects of additives on the improved growth rate and morphology of Chemical Bath Deposited Zn(S,O,OH) buffer layer for Cu(In,Ga)Se2- based solar cells

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Abstract

Zn(S,O,OH) Chemical Bath Deposited (CBD) remains one of the most studied Cd-free buffer layer for replacing the CBD-CdS buffer layer in a Cu(In,Ga)Se2-based (CIGSe) solar cells and has already demonstrated its potential to lead to high-efficiencies. However, in order to further increase the deposition rate of the Zn(S,O,OH) layer during the CBD, the inclusion of additives can be a reasonable strategy, as long as the efficiencies of solar cells are maintained. The aim of this work is to understand the effect of the introduction of additives such as hydrogen peroxide (H2O 2), H2O2+ethanolamine (C2H 7NO) and H2O2+tri-sodium citrate (Na 3C6H5O7) during CBD on the deposition mechanism, the growth rate and the quality of the buffer layer. It has been shown that the combined use of H2O2 and citrate in the bath formulation allows the deposition of Zn(S,O,OH) via a mix of "ion-by-ion" and "cluster-by-cluster" mechanisms that have good properties as buffer layers leading to high efficiency solar cells.

Original languageEnglish
Title of host publicationCompound Semiconductors
Subtitle of host publicationThin-Film Photovoltaics, LEDs, and Smart Energy Controls
Pages39-44
Number of pages6
DOIs
Publication statusPublished - 12 Dec 2013
Event2013 MRS Spring Meeting - San Francisco, CA, United States
Duration: 1 Apr 20135 Apr 2013

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1538
ISSN (Print)0272-9172

Conference

Conference2013 MRS Spring Meeting
Country/TerritoryUnited States
CitySan Francisco, CA
Period1/04/135/04/13

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