TY - JOUR
T1 - Effects of copper and oxygen precipitation during thermal oxidation of silicon
T2 - An electron-beam-induced current study
AU - Correia, A.
AU - Ballutaud, D.
AU - Boutry-Forveille, A.
AU - Maurice, J. L.
PY - 1995/1/1
Y1 - 1995/1/1
N2 - The effects on minority carrier diffusion length Ln of the oxidation of p-type silicon in a copper-contaminated ambient have been analyzed using an electron-beam-induced current. The experiments were carried out on Czochralski (Cz) and float-zone silicon, and on samples with damaged and undamaged surfaces, in order to evaluate the role of oxygen supersaturation in the starting material, and the influence of the formation of oxidation-induced stacking faults on oxygen and copper precipitates during the oxidation anneal. The microstructure of the interface silicon underlayers was controlled using transmission electron microscopy and secondary ion mass spectrometry. The diffusion length Ln was drastically decreased in regions free of copper colonies, showing that a noticeable concentration of copper existed in the form of pointlike recombinant defects in the bulk. This effect was more pronounced in Cz silicon, where it was assigned to the presence of oxygen-based clusters acting as copper traps, and in the cases of damaged surfaces, where it indicated that the growth of the copper-related pointlike defects occurred with the emission of silicon self-interstitials.
AB - The effects on minority carrier diffusion length Ln of the oxidation of p-type silicon in a copper-contaminated ambient have been analyzed using an electron-beam-induced current. The experiments were carried out on Czochralski (Cz) and float-zone silicon, and on samples with damaged and undamaged surfaces, in order to evaluate the role of oxygen supersaturation in the starting material, and the influence of the formation of oxidation-induced stacking faults on oxygen and copper precipitates during the oxidation anneal. The microstructure of the interface silicon underlayers was controlled using transmission electron microscopy and secondary ion mass spectrometry. The diffusion length Ln was drastically decreased in regions free of copper colonies, showing that a noticeable concentration of copper existed in the form of pointlike recombinant defects in the bulk. This effect was more pronounced in Cz silicon, where it was assigned to the presence of oxygen-based clusters acting as copper traps, and in the cases of damaged surfaces, where it indicated that the growth of the copper-related pointlike defects occurred with the emission of silicon self-interstitials.
U2 - 10.1063/1.360475
DO - 10.1063/1.360475
M3 - Article
AN - SCOPUS:0042502993
SN - 0021-8979
VL - 78
SP - 6543
EP - 6553
JO - Journal of Applied Physics
JF - Journal of Applied Physics
IS - 11
ER -