Abstract
The role of ions on the growth of microcrystalline silicon films by the standard hydrogen dilution of silane in a radiofrequency glow discharge is studied through the analysis of the structural properties of thick and thin films. Reducing the ion energy through the increase of the total pressure favors the production of microcrystalline films with large grains and improved transport properties. On the other hand, we report on the obtaining of fully crystallized films directly deposited on glass under conditions of high energy ion bombardment, suggesting that ion bombardment and probably the implantation of hydrogen ions favor the formation of a porous layer where the nucleation of crystallites takes place.
| Original language | English |
|---|---|
| Pages (from-to) | 71-76 |
| Number of pages | 6 |
| Journal | Solid State Phenomena |
| Volume | 80-81 |
| DOIs | |
| Publication status | Published - 1 Jan 2001 |
| Event | Solid State Phenomena -Polycrystalline Semiconductors IV. -Materials, Technology, and Large Area Electronics- - Saint Malo, France Duration: 3 Sept 2000 → 7 Sept 2000 |
Keywords
- Growth mechanism
- Ion bombardment
- Microcrystalline silicon
- Plasma deposition
- Spectroscopic ellipsometry (SE)
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