Effects of roughness on scatterometry signatures

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We used azimuthally-resolved spectroscopic Mueller matrix ellipsometry to study a periodic silicon line structure with and without artificially-generated line edge roughness (LER). Grating profiles were determined from multiple azimuthal configurations, focusing the incident beam into a 60 μm spot. We used rigorous numerical modeling, taking into account the finite numerical aperture and determining the profile shape using a four trapezoid model for the line profile. Data obtained from the perturbed and unperturbed gratings were fit using the same model, and the resulting root-mean-square error (RMSE) values were compared. The comparison shows an increase in RMSE values for the perturbed grating that can be attributed to the effects of LER.

Original languageEnglish
Title of host publicationFrontiers of Characterization and Metrology for Nanoelectronics
Subtitle of host publication2011
Pages49-53
Number of pages5
DOIs
Publication statusPublished - 1 Dec 2011
EventFrontiers of Characterization and Metrology for Nanoelectronics: 2011 - Grenoble, France
Duration: 23 May 201126 May 2011

Publication series

NameAIP Conference Proceedings
Volume1395
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Conference

ConferenceFrontiers of Characterization and Metrology for Nanoelectronics: 2011
Country/TerritoryFrance
CityGrenoble
Period23/05/1126/05/11

Keywords

  • Diffraction grating
  • Ellipsometry
  • Line edge roughness
  • Mueller matrix
  • Multi-azimuth method

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