TY - GEN
T1 - Efficient CIGS solar cells prepared by electrodeposition
AU - Guimard, D.
AU - Bodereau, N.
AU - Kurdi, J.
AU - Guillemoles, J. F.
AU - Lincot, D.
AU - Grand, P. P.
AU - Benfarrah, M.
AU - Taunier, S.
AU - Kerrec, O.
AU - Mogensen, P.
PY - 2003/12/1
Y1 - 2003/12/1
N2 - Cu(In,Ga)Se2/CdS/ZnO cells with efficiencies close to 19 % have been obtained with films prepared by coevaporation of the elements [1], Electrodeposition has the potential to become a suitable method for large production of CIGS solar modules. In this paper, we present the results of an on going collaboration project, between CNRS-ENSCP, EDF (Electricité de France) and SGR (Saint Gobain Recheche) with the support of ADEME. The objective of the project is to develop high-efficiency electrodeposited CIS cells and modules. A proprietary process allows to elaborate cells with different band-gap absorbers. Band-gap materials between 1,00 and 1,5 eV have been achieved. The record cell with an absorber of 1,47 eV yields to an efficiency of 10,2 % (no AR coating, total area 0,1 cm2). The short circuit current is 23.2 mA.cm-3, the open circuit voltage is 741 mV and the fill factor is 59.6 %. The properties of this cell are presented.
AB - Cu(In,Ga)Se2/CdS/ZnO cells with efficiencies close to 19 % have been obtained with films prepared by coevaporation of the elements [1], Electrodeposition has the potential to become a suitable method for large production of CIGS solar modules. In this paper, we present the results of an on going collaboration project, between CNRS-ENSCP, EDF (Electricité de France) and SGR (Saint Gobain Recheche) with the support of ADEME. The objective of the project is to develop high-efficiency electrodeposited CIS cells and modules. A proprietary process allows to elaborate cells with different band-gap absorbers. Band-gap materials between 1,00 and 1,5 eV have been achieved. The record cell with an absorber of 1,47 eV yields to an efficiency of 10,2 % (no AR coating, total area 0,1 cm2). The short circuit current is 23.2 mA.cm-3, the open circuit voltage is 741 mV and the fill factor is 59.6 %. The properties of this cell are presented.
UR - https://www.scopus.com/pages/publications/6344223341
M3 - Conference contribution
AN - SCOPUS:6344223341
SN - 4990181603
SN - 9784990181604
T3 - Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion
SP - 515
EP - 518
BT - Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion
A2 - Kurokawa, K.
A2 - Kazmerski, L.L.
A2 - McNeils, B.
A2 - Yamaguchi, M.
A2 - Wronski, C.
T2 - Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion
Y2 - 11 May 2003 through 18 May 2003
ER -