Electrcal properties of cyano-substituted oligothiophenes towards N-type organic semiconductors

F. Demanze; A. Yassar; D. Fichou

doi:10.1016/s0379-6779(98)01340-x

Electrcal properties of cyano-substituted oligothiophenes towards N-type organic semiconductors

F. Demanze
, A. Yassar
, D. Fichou

Centre national de la recherche scientifique

Research output: Contribution to journal › Conference article › peer-review

Abstract

The synthesis of cyano end-capped sexithiophene is reported using the palladium-catalyzed coupling reaction via organotin intermediates. Schottky diode structures with metal/CN-6T-CN/metal using cyano end-capped sexithiophene and various metals were fabricated by vapour deposition. Electron injection and rectification ratio strongly depend on the metal contact which is compatible with the electron affinity materials.

Original language	English
Pages (from-to)	620-621
Number of pages	2
Journal	Synthetic Metals
Volume	101
Issue number	1-3
DOIs	https://doi.org/10.1016/s0379-6779(98)01340-x
Publication status	Published - 1 Jan 1999
Event	Proceedings of the 1998 International Conference on Science and Technology of Synthetic Metals (ICSM-98) - Montpellier, France Duration: 12 Jul 1998 → 18 Jul 1998

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10.1016/s0379-6779(98)01340-x

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title = "Electrcal properties of cyano-substituted oligothiophenes towards N-type organic semiconductors",

abstract = "The synthesis of cyano end-capped sexithiophene is reported using the palladium-catalyzed coupling reaction via organotin intermediates. Schottky diode structures with metal/CN-6T-CN/metal using cyano end-capped sexithiophene and various metals were fabricated by vapour deposition. Electron injection and rectification ratio strongly depend on the metal contact which is compatible with the electron affinity materials.",

author = "F. Demanze and A. Yassar and D. Fichou",

year = "1999",

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doi = "10.1016/s0379-6779(98)01340-x",

language = "English",

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journal = "Synthetic Metals",

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note = "Proceedings of the 1998 International Conference on Science and Technology of Synthetic Metals (ICSM-98) ; Conference date: 12-07-1998 Through 18-07-1998",

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TY - JOUR

T1 - Electrcal properties of cyano-substituted oligothiophenes towards N-type organic semiconductors

AU - Demanze, F.

AU - Yassar, A.

AU - Fichou, D.

PY - 1999/1/1

Y1 - 1999/1/1

N2 - The synthesis of cyano end-capped sexithiophene is reported using the palladium-catalyzed coupling reaction via organotin intermediates. Schottky diode structures with metal/CN-6T-CN/metal using cyano end-capped sexithiophene and various metals were fabricated by vapour deposition. Electron injection and rectification ratio strongly depend on the metal contact which is compatible with the electron affinity materials.

AB - The synthesis of cyano end-capped sexithiophene is reported using the palladium-catalyzed coupling reaction via organotin intermediates. Schottky diode structures with metal/CN-6T-CN/metal using cyano end-capped sexithiophene and various metals were fabricated by vapour deposition. Electron injection and rectification ratio strongly depend on the metal contact which is compatible with the electron affinity materials.

U2 - 10.1016/s0379-6779(98)01340-x

DO - 10.1016/s0379-6779(98)01340-x

M3 - Conference article

AN - SCOPUS:0032590835

SN - 0379-6779

VL - 101

SP - 620

EP - 621

JO - Synthetic Metals

JF - Synthetic Metals

IS - 1-3

T2 - Proceedings of the 1998 International Conference on Science and Technology of Synthetic Metals (ICSM-98)

Y2 - 12 July 1998 through 18 July 1998

ER -

Electrcal properties of cyano-substituted oligothiophenes towards N-type organic semiconductors

Abstract

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