Electrical Detection of Spin Accumulation in a [Formula presented]-Type GaAs Quantum Well

R. Mattana; J. M. George; H. Jaffrès; F. Nguyen Van Dau; A. Fert; B. Lépine; A. Guivarc’h; G. Jézéquel

doi:10.1103/PhysRevLett.90.166601

Electrical Detection of Spin Accumulation in a [Formula presented]-Type GaAs Quantum Well

R. Mattana
, J. M. George
, H. Jaffrès
, F. Nguyen Van Dau
, A. Fert
, B. Lépine
, A. Guivarc’h
, G. Jézéquel

École Polytechnique

Centre national de la recherche scientifique
Equipe de Physique des Surfaces et Interfaces

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

We report on experiments in which a spin-polarized current is injected from a GaMnAs ferromagnetic electrode into a GaAs layer through an AlAs barrier. The resulting spin polarization in GaAs is detected by measuring how the tunneling current, to a second GaMnAs ferromagnetic electrode, depends on the orientation of its magnetization. Our results can be accounted for by sequential tunneling with the nonrelaxed spin splitting of the chemical potential, that is, spin accumulation, in GaAs. We discuss the conditions on the hole spin relaxation time in GaAs that are required to obtain the large effects we observe.

Original language	English
Pages (from-to)	4
Number of pages	1
Journal	Physical Review Letters
Volume	90
Issue number	16
DOIs	https://doi.org/10.1103/PhysRevLett.90.166601
Publication status	Published - 1 Jan 2003

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10.1103/PhysRevLett.90.166601

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title = "Electrical Detection of Spin Accumulation in a [Formula presented]-Type GaAs Quantum Well",

abstract = "We report on experiments in which a spin-polarized current is injected from a GaMnAs ferromagnetic electrode into a GaAs layer through an AlAs barrier. The resulting spin polarization in GaAs is detected by measuring how the tunneling current, to a second GaMnAs ferromagnetic electrode, depends on the orientation of its magnetization. Our results can be accounted for by sequential tunneling with the nonrelaxed spin splitting of the chemical potential, that is, spin accumulation, in GaAs. We discuss the conditions on the hole spin relaxation time in GaAs that are required to obtain the large effects we observe.",

author = "R. Mattana and George, \{J. M.\} and H. Jaffr{\`e}s and \{Nguyen Van Dau\}, F. and A. Fert and B. L{\'e}pine and A. Guivarc{\textquoteright}h and G. J{\'e}z{\'e}quel",

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T1 - Electrical Detection of Spin Accumulation in a [Formula presented]-Type GaAs Quantum Well

AU - Mattana, R.

AU - George, J. M.

AU - Jaffrès, H.

AU - Nguyen Van Dau, F.

AU - Fert, A.

AU - Lépine, B.

AU - Guivarc’h, A.

AU - Jézéquel, G.

PY - 2003/1/1

Y1 - 2003/1/1

N2 - We report on experiments in which a spin-polarized current is injected from a GaMnAs ferromagnetic electrode into a GaAs layer through an AlAs barrier. The resulting spin polarization in GaAs is detected by measuring how the tunneling current, to a second GaMnAs ferromagnetic electrode, depends on the orientation of its magnetization. Our results can be accounted for by sequential tunneling with the nonrelaxed spin splitting of the chemical potential, that is, spin accumulation, in GaAs. We discuss the conditions on the hole spin relaxation time in GaAs that are required to obtain the large effects we observe.

AB - We report on experiments in which a spin-polarized current is injected from a GaMnAs ferromagnetic electrode into a GaAs layer through an AlAs barrier. The resulting spin polarization in GaAs is detected by measuring how the tunneling current, to a second GaMnAs ferromagnetic electrode, depends on the orientation of its magnetization. Our results can be accounted for by sequential tunneling with the nonrelaxed spin splitting of the chemical potential, that is, spin accumulation, in GaAs. We discuss the conditions on the hole spin relaxation time in GaAs that are required to obtain the large effects we observe.

U2 - 10.1103/PhysRevLett.90.166601

DO - 10.1103/PhysRevLett.90.166601

M3 - Article

AN - SCOPUS:85038325278

SN - 0031-9007

VL - 90

SP - 4

JO - Physical Review Letters

JF - Physical Review Letters

IS - 16

ER -

Electrical Detection of Spin Accumulation in a [Formula presented]-Type GaAs Quantum Well

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