Abstract
Experiments in which, after injection of a pin-polarized current into a GaAs layer from a GaMnA electrode, the spin polarization in GaAs is detected by measuring the spin polarization of the current tunneling into a second GaMnAs electrode are presented. It is shown that the results can be explained by sequential tunneling with low enough spin relaxation in the GaAs layer. In addition, it is shown that this condition can not be easily satisfied with a metallic spacer instead of GaAs; as a result, the effect observed are specific to spin injection into semiconductors.
| Original language | English |
|---|---|
| Article number | 166601 |
| Pages (from-to) | 166601/1-166601/4 |
| Journal | Physical Review Letters |
| Volume | 90 |
| Issue number | 16 |
| Publication status | Published - 25 Apr 2003 |