Electrical spin injection in InAs/GaAs p-doped quantum dots through Co/Al2O3/GaAs tunnel barrier

L. Lombez; P. F. Braun; P. Renucci; P. Gallo; H. Carrère; P. H. Binh; X. Marie; T. Amand; J. L. Gaufrier; B. Urbaszek; A. Arnoult; C. Fontaine; C. Deranlot; R. Mattana; H. Jaffrès

doi:10.1002/pssc.200673320

Electrical spin injection in InAs/GaAs p-doped quantum dots through Co/Al₂O₃/GaAs tunnel barrier

L. Lombez
, P. F. Braun
, P. Renucci
, P. Gallo
, H. Carrère
, P. H. Binh
, X. Marie
, T. Amand
, J. L. Gaufrier
, B. Urbaszek
, A. Arnoult
, C. Fontaine
, C. Deranlot
, R. Mattana
, H. Jaffrès

INSA Toulouse
LAAS-CNRS
Institute of Material Science
Université Paris-Sud

Research output: Contribution to journal › Conference article › peer-review

1 Citation (Scopus)

Abstract

We have demonstrated by CW electroluminescence the ability to inject spin polarized electrons through Co/Al₂O₃/GaAs structures into p-doped InAs/GaAs quantum dots embedded in a PIN GaAs light emitting diode. The spin relaxation processes in the p-doped quantum dots are characterized independently by optical measurements (time and polarization-resolved photoluminescence). The measured electroluminescence circular polarization is about 15 % at 1.7 K in a 2 T magnetic field, leading to an estimation of the electrical spin injection yield of about 35%.

Original language	English
Pages (from-to)	567-569
Number of pages	3
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	4
Issue number	2
DOIs	https://doi.org/10.1002/pssc.200673320
Publication status	Published - 1 Dec 2007
Externally published	Yes
Event	International Conference on Superlattices, Nano-structures and Nano-devices, ICSNN-2006 - Istanbul, Turkey Duration: 30 Jul 2006 → 4 Aug 2006

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10.1002/pssc.200673320

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Lombez, L., Braun, P. F., Renucci, P., Gallo, P., Carrère, H., Binh, P. H., Marie, X., Amand, T., Gaufrier, J. L., Urbaszek, B., Arnoult, A., Fontaine, C., Deranlot, C., Mattana, R., & Jaffrès, H. (2007). Electrical spin injection in InAs/GaAs p-doped quantum dots through Co/Al₂O₃/GaAs tunnel barrier. Physica Status Solidi (C) Current Topics in Solid State Physics, 4(2), 567-569. https://doi.org/10.1002/pssc.200673320

@article{58337478909842f48c89eeafbd7c8290,

title = "Electrical spin injection in InAs/GaAs p-doped quantum dots through Co/Al2O3/GaAs tunnel barrier",

abstract = "We have demonstrated by CW electroluminescence the ability to inject spin polarized electrons through Co/Al2O3/GaAs structures into p-doped InAs/GaAs quantum dots embedded in a PIN GaAs light emitting diode. The spin relaxation processes in the p-doped quantum dots are characterized independently by optical measurements (time and polarization-resolved photoluminescence). The measured electroluminescence circular polarization is about 15 \% at 1.7 K in a 2 T magnetic field, leading to an estimation of the electrical spin injection yield of about 35\%.",

author = "L. Lombez and Braun, \{P. F.\} and P. Renucci and P. Gallo and H. Carr{\`e}re and Binh, \{P. H.\} and X. Marie and T. Amand and Gaufrier, \{J. L.\} and B. Urbaszek and A. Arnoult and C. Fontaine and C. Deranlot and R. Mattana and H. Jaffr{\`e}s",

year = "2007",

month = dec,

day = "1",

doi = "10.1002/pssc.200673320",

language = "English",

volume = "4",

pages = "567--569",

journal = "Physica Status Solidi (C) Current Topics in Solid State Physics",

issn = "1862-6351",

publisher = "Wiley-VCH Verlag",

number = "2",

note = "International Conference on Superlattices, Nano-structures and Nano-devices, ICSNN-2006 ; Conference date: 30-07-2006 Through 04-08-2006",

}

Lombez, L, Braun, PF, Renucci, P, Gallo, P, Carrère, H, Binh, PH, Marie, X, Amand, T, Gaufrier, JL, Urbaszek, B, Arnoult, A, Fontaine, C, Deranlot, C, Mattana, R & Jaffrès, H 2007, 'Electrical spin injection in InAs/GaAs p-doped quantum dots through Co/Al₂O₃/GaAs tunnel barrier', Physica Status Solidi (C) Current Topics in Solid State Physics, vol. 4, no. 2, pp. 567-569. https://doi.org/10.1002/pssc.200673320

TY - JOUR

T1 - Electrical spin injection in InAs/GaAs p-doped quantum dots through Co/Al2O3/GaAs tunnel barrier

AU - Lombez, L.

AU - Braun, P. F.

AU - Renucci, P.

AU - Gallo, P.

AU - Carrère, H.

AU - Binh, P. H.

AU - Marie, X.

AU - Amand, T.

AU - Gaufrier, J. L.

AU - Urbaszek, B.

AU - Arnoult, A.

AU - Fontaine, C.

AU - Deranlot, C.

AU - Mattana, R.

AU - Jaffrès, H.

PY - 2007/12/1

Y1 - 2007/12/1

N2 - We have demonstrated by CW electroluminescence the ability to inject spin polarized electrons through Co/Al2O3/GaAs structures into p-doped InAs/GaAs quantum dots embedded in a PIN GaAs light emitting diode. The spin relaxation processes in the p-doped quantum dots are characterized independently by optical measurements (time and polarization-resolved photoluminescence). The measured electroluminescence circular polarization is about 15 % at 1.7 K in a 2 T magnetic field, leading to an estimation of the electrical spin injection yield of about 35%.

AB - We have demonstrated by CW electroluminescence the ability to inject spin polarized electrons through Co/Al2O3/GaAs structures into p-doped InAs/GaAs quantum dots embedded in a PIN GaAs light emitting diode. The spin relaxation processes in the p-doped quantum dots are characterized independently by optical measurements (time and polarization-resolved photoluminescence). The measured electroluminescence circular polarization is about 15 % at 1.7 K in a 2 T magnetic field, leading to an estimation of the electrical spin injection yield of about 35%.

U2 - 10.1002/pssc.200673320

DO - 10.1002/pssc.200673320

M3 - Conference article

AN - SCOPUS:50049110989

SN - 1862-6351

VL - 4

SP - 567

EP - 569

JO - Physica Status Solidi (C) Current Topics in Solid State Physics

JF - Physica Status Solidi (C) Current Topics in Solid State Physics

IS - 2

T2 - International Conference on Superlattices, Nano-structures and Nano-devices, ICSNN-2006

Y2 - 30 July 2006 through 4 August 2006

ER -

Electrical spin injection in InAs/GaAs p-doped quantum dots through Co/Al2O3/GaAs tunnel barrier

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Electrical spin injection in InAs/GaAs p-doped quantum dots through Co/Al₂O₃/GaAs tunnel barrier