Electrical spin injection into GaAs based light emitting diodes using perpendicular magnetic tunnel junction-type spin injector

B. S. Tao; P. Barate; J. Frougier; P. Renucci; B. Xu; A. Djeffal; H. Jaffrès; J. M. George; X. Marie; S. Petit-Watelot; S. Mangin; X. F. Han; Z. G. Wang; Y. Lu

doi:10.1063/1.4945768

Electrical spin injection into GaAs based light emitting diodes using perpendicular magnetic tunnel junction-type spin injector

B. S. Tao, P. Barate, J. Frougier, P. Renucci, B. Xu, A. Djeffal, H. Jaffrès, J. M. George, X. Marie, S. Petit-Watelot, S. Mangin, X. F. Han, Z. G. Wang, Y. Lu

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Abstract

Remanent electrical spin injection into an InGaAs/GaAs based quantum well light emitting diode is realized by using a perpendicularly magnetized MgO/CoFeB/Ta/CoFeB/MgO spin injector. We demonstrate that the Ta interlayer plays an important role to establish the perpendicular magnetic anisotropy and the thickness of Ta interlayer determines the type of exchange coupling between the two adjacent CoFeB layers. They are ferromagnetically or antiferromagnetically coupled for a Ta thickness of 0.5 nm or 0.75 nm, respectively. A circular polarized electroluminescence (P_c) of about 10% is obtained at low temperature and at zero magnetic field. The direction of the electrically injected spins is determined only by the orientation of the magnetization of the bottom CoFeB layer which is adjacent to the MgO/GaAs interface. This work proves the critical role of the bottom CoFeB/MgO interface on the spin-injection and paves the way for the electrical control of spin injection via magnetic tunnel junction-type spin injector.

Original language	English
Article number	152404
Journal	Applied Physics Letters
Volume	108
Issue number	15
DOIs	https://doi.org/10.1063/1.4945768
Publication status	Published - 11 Apr 2016
Externally published	Yes

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Tao, B. S., Barate, P., Frougier, J., Renucci, P., Xu, B., Djeffal, A., Jaffrès, H., George, J. M., Marie, X., Petit-Watelot, S., Mangin, S., Han, X. F., Wang, Z. G., & Lu, Y. (2016). Electrical spin injection into GaAs based light emitting diodes using perpendicular magnetic tunnel junction-type spin injector. Applied Physics Letters, 108(15), Article 152404. https://doi.org/10.1063/1.4945768

@article{03c5c7a3002b40709f4169e01ad2cd2d,

title = "Electrical spin injection into GaAs based light emitting diodes using perpendicular magnetic tunnel junction-type spin injector",

abstract = "Remanent electrical spin injection into an InGaAs/GaAs based quantum well light emitting diode is realized by using a perpendicularly magnetized MgO/CoFeB/Ta/CoFeB/MgO spin injector. We demonstrate that the Ta interlayer plays an important role to establish the perpendicular magnetic anisotropy and the thickness of Ta interlayer determines the type of exchange coupling between the two adjacent CoFeB layers. They are ferromagnetically or antiferromagnetically coupled for a Ta thickness of 0.5 nm or 0.75 nm, respectively. A circular polarized electroluminescence (Pc) of about 10\% is obtained at low temperature and at zero magnetic field. The direction of the electrically injected spins is determined only by the orientation of the magnetization of the bottom CoFeB layer which is adjacent to the MgO/GaAs interface. This work proves the critical role of the bottom CoFeB/MgO interface on the spin-injection and paves the way for the electrical control of spin injection via magnetic tunnel junction-type spin injector.",

author = "Tao, \{B. S.\} and P. Barate and J. Frougier and P. Renucci and B. Xu and A. Djeffal and H. Jaffr{\`e}s and George, \{J. M.\} and X. Marie and S. Petit-Watelot and S. Mangin and Han, \{X. F.\} and Wang, \{Z. G.\} and Y. Lu",

note = "Publisher Copyright: {\textcopyright} 2016 AIP Publishing LLC.",

year = "2016",

month = apr,

day = "11",

doi = "10.1063/1.4945768",

language = "English",

volume = "108",

journal = "Applied Physics Letters",

issn = "0003-6951",

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Tao, BS, Barate, P, Frougier, J, Renucci, P, Xu, B, Djeffal, A, Jaffrès, H, George, JM, Marie, X, Petit-Watelot, S, Mangin, S, Han, XF, Wang, ZG & Lu, Y 2016, 'Electrical spin injection into GaAs based light emitting diodes using perpendicular magnetic tunnel junction-type spin injector', Applied Physics Letters, vol. 108, no. 15, 152404. https://doi.org/10.1063/1.4945768

TY - JOUR

T1 - Electrical spin injection into GaAs based light emitting diodes using perpendicular magnetic tunnel junction-type spin injector

AU - Tao, B. S.

AU - Barate, P.

AU - Frougier, J.

AU - Renucci, P.

AU - Xu, B.

AU - Djeffal, A.

AU - Jaffrès, H.

AU - George, J. M.

AU - Marie, X.

AU - Petit-Watelot, S.

AU - Mangin, S.

AU - Han, X. F.

AU - Wang, Z. G.

AU - Lu, Y.

PY - 2016/4/11

Y1 - 2016/4/11

N2 - Remanent electrical spin injection into an InGaAs/GaAs based quantum well light emitting diode is realized by using a perpendicularly magnetized MgO/CoFeB/Ta/CoFeB/MgO spin injector. We demonstrate that the Ta interlayer plays an important role to establish the perpendicular magnetic anisotropy and the thickness of Ta interlayer determines the type of exchange coupling between the two adjacent CoFeB layers. They are ferromagnetically or antiferromagnetically coupled for a Ta thickness of 0.5 nm or 0.75 nm, respectively. A circular polarized electroluminescence (Pc) of about 10% is obtained at low temperature and at zero magnetic field. The direction of the electrically injected spins is determined only by the orientation of the magnetization of the bottom CoFeB layer which is adjacent to the MgO/GaAs interface. This work proves the critical role of the bottom CoFeB/MgO interface on the spin-injection and paves the way for the electrical control of spin injection via magnetic tunnel junction-type spin injector.

AB - Remanent electrical spin injection into an InGaAs/GaAs based quantum well light emitting diode is realized by using a perpendicularly magnetized MgO/CoFeB/Ta/CoFeB/MgO spin injector. We demonstrate that the Ta interlayer plays an important role to establish the perpendicular magnetic anisotropy and the thickness of Ta interlayer determines the type of exchange coupling between the two adjacent CoFeB layers. They are ferromagnetically or antiferromagnetically coupled for a Ta thickness of 0.5 nm or 0.75 nm, respectively. A circular polarized electroluminescence (Pc) of about 10% is obtained at low temperature and at zero magnetic field. The direction of the electrically injected spins is determined only by the orientation of the magnetization of the bottom CoFeB layer which is adjacent to the MgO/GaAs interface. This work proves the critical role of the bottom CoFeB/MgO interface on the spin-injection and paves the way for the electrical control of spin injection via magnetic tunnel junction-type spin injector.

U2 - 10.1063/1.4945768

DO - 10.1063/1.4945768

M3 - Article

AN - SCOPUS:84964469505

SN - 0003-6951

VL - 108

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 15

M1 - 152404

ER -

Electrical spin injection into GaAs based light emitting diodes using perpendicular magnetic tunnel junction-type spin injector

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