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Electrically enhanced infrared photoluminescence in Cr:ZnSe

  • Julien Jaeck
  • , Riad Haidar
  • , Fabrice Pardo
  • , Jean Luc Pelouard
  • , Emmanuel Rosencher
  • ONERA Office National d'Etudes et Recherches Aerospatiales
  • Centre de Nanosciences et de Nanotechnologies

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Citation (Scopus)

Abstract

A six-fold enhancement of infrared photoluminescence from thick single crystal Cr:ZnSe under electrical excitation is reported. The baseline 2-3 μm photoluminescence signal is obtained under a charge-transfer band optical seeding. The electrically enhanced infrared signal is localized under a semi-transparent cathode and is shown to be likely related to hole concentration. The various mechanisms of excitation involved in this infrared light emission will be discussed.

Original languageEnglish
Title of host publicationPhysics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30
Pages29-30
Number of pages2
DOIs
Publication statusPublished - 1 Dec 2011
Externally publishedYes
Event30th International Conference on the Physics of Semiconductors, ICPS-30 - Seoul, Korea, Republic of
Duration: 25 Jul 201030 Jul 2010

Publication series

NameAIP Conference Proceedings
Volume1399
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Conference

Conference30th International Conference on the Physics of Semiconductors, ICPS-30
Country/TerritoryKorea, Republic of
CitySeoul
Period25/07/1030/07/10

Keywords

  • Cr:ZnSe
  • II-VI semiconductors
  • Photoluminescence

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