@inproceedings{4258cad41502428b889a44c362f485e3,
title = "Electrochemical growth gold buffer layer on H-Si(111) surfaces and their applications",
abstract = "This paper reviews our recent work about gold electrodeposition on H-terminated Si(lll). It is shown that Au(lll)/Si(lll) epitaxial layers are grown and that the film morphology can be varied according to the deposition conditions (potential and solution pH). At pH = 14 (cyanide solution) selective gold nucleation at the substrate monatomic step edges is observed. A homogeneous nucleation is obtained at pH 4 (chloride solution). In the former case 3D growth occurs and in the latter case ultra smooth buffer layers are obtained. Application of these substrates to formation of magnetic nanostructures with tuneable properties is demonstrated.",
author = "P. Allongue and F. Maroun and H. Jurca and R. Cort{\`e}s and P. Prod'homme and N. Tourneri{\`e}",
year = "2009",
month = jan,
day = "1",
doi = "10.1149/1.3120701",
language = "English",
isbn = "9781566777117",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "3",
pages = "197--207",
booktitle = "ECS Transactions - State-of-the-Art Program on Compound Semiconductors 50 (SOTAPOCS 50)and Processes at the Semiconductor Solution Interface 3",
edition = "3",
note = "50th State-of-the-Art Symposium on Compound Semiconductors, SOTAPOCS 50 and 3rd International Symposium on Processes at the Semiconductor-Solution Interface, PSSI 3 - 215th ECS Meeting ; Conference date: 24-05-2009 Through 29-05-2009",
}