Electrochemistry and photoluminescence of porous amorphous silicon

R. B. Wehrspohn; J. N. Chazalviel; F. Ozanam; I. Solomon

doi:10.1016/S0040-6090(96)09362-5

Electrochemistry and photoluminescence of porous amorphous silicon

R. B. Wehrspohn
, J. N. Chazalviel
, F. Ozanam
, I. Solomon

Research output: Contribution to journal › Article › peer-review

Abstract

A systematic study of the electrochemistry of hydrogenated amorphous silicon (a-Si:H) is presented in order to explain pore formation in this material. The similarity of the cyclovoltammograms of amorphous and crystalline silicon demonstrates that the basic electrochemical reactions are similar in both materials. A striking difference between the electrochemistry of these two materials is the existence of an instability which limits the maximum thickness of the porous amorphous material that can be obtained. We explain this instability by the large value of the resistivity of amorphous silicon in comparison with that of the electrolyte, and model this phenomenon by a linear stability analysis. We detected the same phenomenon during anodization of highly resistive p-type crystalline silicon. The photoluminescence intensity of porous a-Si:H is quite comparable with that of crystalline silicon of the same thickness.

Original language	English
Pages (from-to)	5-8
Number of pages	4
Journal	Thin Solid Films
Volume	297
Issue number	1-2
DOIs	https://doi.org/10.1016/S0040-6090(96)09362-5
Publication status	Published - 1 Apr 1997

Keywords

Luminescence
Silicon

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10.1016/S0040-6090(96)09362-5

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title = "Electrochemistry and photoluminescence of porous amorphous silicon",

abstract = "A systematic study of the electrochemistry of hydrogenated amorphous silicon (a-Si:H) is presented in order to explain pore formation in this material. The similarity of the cyclovoltammograms of amorphous and crystalline silicon demonstrates that the basic electrochemical reactions are similar in both materials. A striking difference between the electrochemistry of these two materials is the existence of an instability which limits the maximum thickness of the porous amorphous material that can be obtained. We explain this instability by the large value of the resistivity of amorphous silicon in comparison with that of the electrolyte, and model this phenomenon by a linear stability analysis. We detected the same phenomenon during anodization of highly resistive p-type crystalline silicon. The photoluminescence intensity of porous a-Si:H is quite comparable with that of crystalline silicon of the same thickness.",

keywords = "Luminescence, Silicon",

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TY - JOUR

T1 - Electrochemistry and photoluminescence of porous amorphous silicon

AU - Wehrspohn, R. B.

AU - Chazalviel, J. N.

AU - Ozanam, F.

AU - Solomon, I.

PY - 1997/4/1

Y1 - 1997/4/1

N2 - A systematic study of the electrochemistry of hydrogenated amorphous silicon (a-Si:H) is presented in order to explain pore formation in this material. The similarity of the cyclovoltammograms of amorphous and crystalline silicon demonstrates that the basic electrochemical reactions are similar in both materials. A striking difference between the electrochemistry of these two materials is the existence of an instability which limits the maximum thickness of the porous amorphous material that can be obtained. We explain this instability by the large value of the resistivity of amorphous silicon in comparison with that of the electrolyte, and model this phenomenon by a linear stability analysis. We detected the same phenomenon during anodization of highly resistive p-type crystalline silicon. The photoluminescence intensity of porous a-Si:H is quite comparable with that of crystalline silicon of the same thickness.

AB - A systematic study of the electrochemistry of hydrogenated amorphous silicon (a-Si:H) is presented in order to explain pore formation in this material. The similarity of the cyclovoltammograms of amorphous and crystalline silicon demonstrates that the basic electrochemical reactions are similar in both materials. A striking difference between the electrochemistry of these two materials is the existence of an instability which limits the maximum thickness of the porous amorphous material that can be obtained. We explain this instability by the large value of the resistivity of amorphous silicon in comparison with that of the electrolyte, and model this phenomenon by a linear stability analysis. We detected the same phenomenon during anodization of highly resistive p-type crystalline silicon. The photoluminescence intensity of porous a-Si:H is quite comparable with that of crystalline silicon of the same thickness.

KW - Luminescence

KW - Silicon

U2 - 10.1016/S0040-6090(96)09362-5

DO - 10.1016/S0040-6090(96)09362-5

M3 - Article

AN - SCOPUS:0031125737

SN - 0040-6090

VL - 297

SP - 5

EP - 8

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

ER -

Electrochemistry and photoluminescence of porous amorphous silicon

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Keywords

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