Electrodeposition of ZnO-doped films as window layer for Cd-free CIGS-based solar cells

  • Fabien Tsin
  • , Amélie Vénérosy
  • , Thibaud Hildebrandt
  • , Dimitrios Hariskos
  • , Negar Naghavi
  • , Daniel Lincot
  • , Jean Rousset

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The Cu(In,Ga)Se2 (CIGS) thin film solar cell technology has made a steady progress within the last decade reaching efficiency up to 22.3% on laboratory scale, thus overpassing the highest efficiency for polycrystalline silicon solar cells. High efficiency CIGS modules employ a so-called buffer layer of cadmium sulfide CdS deposited by Chemical Bath Deposition (CBD), which presence and Cd-containing waste present some environmental concerns. A second potential bottleneck for CIGS technology is its window layer made of i-ZnO/ZnO:Al, which is deposited by sputtering requiring expensive vacuum equipment. A non-vacuum deposition of transparent conductive oxide (TCO) relying on simpler equipment with lower investment costs will be more economically attractive, and could increase competitiveness of CIGS-based modules with the mainstream silicon-based technologies. In the frame of Novazolar project, we have developed a low-cost aqueous solution photo assisted electrodeposition process of the ZnO-based window layer for high efficiency CIGS-based solar cells. The window layer deposition have been first optimized on classical CdS buffer layer leading to cells with efficiencies similar to those measured with the sputtered references on the same absorber (15%). The the optimized ZnO doped layer has been adapted to cadmium free devices where the CdS is replaced by chemical bath deposited zinc oxysulfide Zn(S,O) buffer layer. The effect of different growth parameters has been studied on CBD-Zn(S,O)-plated co-evaporated Cu(In,Ga)Se2 substrates provided by the Zentrum für Sonnenenergie-und Wasserstoff-Forschung (ZSW). This optimization of the electrodeposition of ZnO:Cl on CIGS/Zn(S,O) stacks led to record efficiency of 14%, while the reference cell with a sputtered (Zn,Mg)O/ZnO:Al window layer has an efficiency of 15.2%.

Original languageEnglish
Title of host publicationOxide-Based Materials and Devices VII
EditorsDavid C. Look, Ferechteh H. Teherani, David J. Rogers
PublisherSPIE
ISBN (Electronic)9781628419849
DOIs
Publication statusPublished - 1 Jan 2016
EventOxide-Based Materials and Devices VII - San Francisco, United States
Duration: 14 Feb 201617 Feb 2016

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume9749
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

ConferenceOxide-Based Materials and Devices VII
Country/TerritoryUnited States
CitySan Francisco
Period14/02/1617/02/16

Keywords

  • CIGS
  • Cd-free
  • buffer layer
  • electrodeposition
  • solar cell
  • window layer
  • zinc oxide
  • zinc oxisulfide

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