Electron-beam-induced current quantitative mapping: application to Si solar cells

A. Barhdadi; M. Barbé; A. Riviére; J. L. Maurice

doi:10.1016/0921-5107(94)90300-X

Electron-beam-induced current quantitative mapping: application to Si solar cells

A. Barhdadi
, M. Barbé
, A. Riviére
, J. L. Maurice

Centre national de la recherche scientifique

Research output: Contribution to journal › Article › peer-review

Abstract

Computer processing of electron-beam-induced current images is reported. The grey levels of the image are converted into values of minority-carrier diffusion lenght L_D. Only one digital image, recorded in appropriate conditions, allows one to determine L_D in any chosen area of the device. The technique is applied for performing quantitative high resolution assessment of diffusion length in large-grained polycrystalline silicon, in as-grown material as well as in fully processed solar cells.

Original language	English
Pages (from-to)	68-73
Number of pages	6
Journal	Materials Science and Engineering: B
Volume	24
Issue number	1-3
DOIs	https://doi.org/10.1016/0921-5107(94)90300-X
Publication status	Published - 1 Jan 1994

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title = "Electron-beam-induced current quantitative mapping: application to Si solar cells",

abstract = "Computer processing of electron-beam-induced current images is reported. The grey levels of the image are converted into values of minority-carrier diffusion lenght LD. Only one digital image, recorded in appropriate conditions, allows one to determine LD in any chosen area of the device. The technique is applied for performing quantitative high resolution assessment of diffusion length in large-grained polycrystalline silicon, in as-grown material as well as in fully processed solar cells.",

author = "A. Barhdadi and M. Barb{\'e} and A. Rivi{\'e}re and Maurice, \{J. L.\}",

year = "1994",

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doi = "10.1016/0921-5107(94)90300-X",

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T2 - application to Si solar cells

AU - Barhdadi, A.

AU - Barbé, M.

AU - Riviére, A.

AU - Maurice, J. L.

PY - 1994/1/1

Y1 - 1994/1/1

N2 - Computer processing of electron-beam-induced current images is reported. The grey levels of the image are converted into values of minority-carrier diffusion lenght LD. Only one digital image, recorded in appropriate conditions, allows one to determine LD in any chosen area of the device. The technique is applied for performing quantitative high resolution assessment of diffusion length in large-grained polycrystalline silicon, in as-grown material as well as in fully processed solar cells.

AB - Computer processing of electron-beam-induced current images is reported. The grey levels of the image are converted into values of minority-carrier diffusion lenght LD. Only one digital image, recorded in appropriate conditions, allows one to determine LD in any chosen area of the device. The technique is applied for performing quantitative high resolution assessment of diffusion length in large-grained polycrystalline silicon, in as-grown material as well as in fully processed solar cells.

U2 - 10.1016/0921-5107(94)90300-X

DO - 10.1016/0921-5107(94)90300-X

M3 - Article

AN - SCOPUS:0028430243

SN - 0921-5107

VL - 24

SP - 68

EP - 73

JO - Materials Science and Engineering: B

JF - Materials Science and Engineering: B

IS - 1-3

ER -

Electron-beam-induced current quantitative mapping: application to Si solar cells

Abstract

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